基于键合线等效电阻的IGBT模块老化失效研究

发布时间：2018-05-29 14:35

本文选题：绝缘栅双极型晶体管 + 键合线　；参考：《电工技术学报》2017年20期

【摘要】：已有研究表明,键合线老化脱落失效是影响绝缘栅双极型晶体管(IGBT)可靠性的主要因素之一。以此为研究背景,首先根据IGBT模块内部键合线的结构布局与物理特性,分析键合线等效电阻与关断暂态波形的关系,建立键合线等效电阻与关断过程中密勒平台电压以及集电极电流的数学关系式,通过实验测量获得键合线等效电阻,最后分别对键合线等效电阻与键合线断裂数的关系进行定性与定量的分析,得出键合线等效电阻会随键合线断裂数的增加同方向变化,这也证明了本文所提方法的可行性和正确性。
[Abstract]:It has been shown that the aging and shedding failure of bonding line is one of the main factors that affect the reliability of IGBT (Insulated Gate Bipolar Transistor). Based on the research background, the relationship between the equivalent resistance of the bonding line and the turn-off transient waveform is analyzed according to the structural layout and physical characteristics of the internal bonding line of the IGBT module. The mathematical relationship between the equivalent resistance of bonding line and the voltage of Miller platform and collector current during turn-off is established. The equivalent resistance of bond line is obtained by experimental measurement. Finally, the relationship between the equivalent resistance of the bonding line and the fracture number of the bond line is analyzed qualitatively and quantitatively. It is concluded that the equivalent resistance of the bond line changes in the same direction with the increase of the fracture number of the bond line. This also proves the feasibility and correctness of the proposed method.
【作者单位】：输配电装备及系统安全与新技术国家重点实验室(重庆大学);
【基金】：国家自然科学基金重点项目(51137006);国家自然科学基金项目(51577020)资助
【分类号】：TN322.8

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