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LED微阵列器件的热学性能分析及热沉结构设计

发布时间:2018-05-31 18:58

  本文选题:热学特性 + 有限元分析 ; 参考:《中国科学院研究生院(长春光学精密机械与物理研究所)》2015年硕士论文


【摘要】:LED微阵列芯片利用MOEMS技术在一整块半导体外延片上直接制作出若干规则排列的微小发光单元,形成LED二维微阵列结构。与传统的LED芯片相比微阵列芯片具有集成度高、发光效率高、亮度高等优点,在显示、照明、通讯等领域具有广阔的应用前景.随着LED微阵列芯片单元集成度的提高和功率的增大,芯片的散热问题也变得越来越重要,成为了制约LED微阵列芯片发展的关键因素之一。因此,对LED微阵列芯片的热特性进行分析具有重要的意义。本文针对AlGaInP材料LED微阵列建立了有限元热分析模型,介绍了实体模型建立、网格划分以及边界条件的施加方法。模拟分析了在脉冲电流驱动下,单个单元和3×3单元工作时阵列的温度分布情况。通过计算建立了一种阵列的简化模型,简化后的模型适用于大尺寸阵列温度场分布的计算。结果表明,简化模型与原始模型的温度分布规律基本一致,计算得到的两种模型在工作1.5s时的温度相对误差为0.8%。使用简化模型模拟了含104个单元、尺寸为10mm×10mm×100μm的芯片的温度场分布,工作1.5s时的芯片中心温度已达到360.6℃。为解决其散热问题,设计了两种热沉结构,并对其结构进行了优化,分析了翅片数量、翅片尺寸、粘结材料对芯片温度的影响。
[Abstract]:The LED microarray chip uses MOEMS technology to fabricate several regular arrangement micro luminescent cells directly on a semiconductor epitaxial wafer to form a two-dimensional LED microarray structure. Compared with the traditional LED chip, the microarray chip has the advantages of high integration, high luminous efficiency, high brightness and so on. It has a broad application prospect in the fields of display, lighting, communication and so on. With the increase of integration and power of LED microarray chip, the problem of heat dissipation becomes more and more important, which has become one of the key factors restricting the development of LED microarray chip. Therefore, it is of great significance to analyze the thermal characteristics of LED microarray chips. In this paper, the finite element thermal analysis model for AlGaInP LED microarray is established, and the methods of establishing solid model, meshing and applying boundary conditions are introduced. The temperature distribution of single unit and 3 脳 3 unit is simulated and analyzed. A simplified model of the array is established by calculation. The simplified model is suitable for the calculation of the temperature field distribution of the large array. The results show that the temperature distribution of the simplified model is basically consistent with that of the original model, and the relative temperature error of the two models is 0.8 at 1.5 s. The temperature field distribution of the chip containing 104 units and the size of 10mm 脳 10mm 脳 100 渭 m is simulated by using the simplified model. The core temperature of the chip has reached 360.6 鈩,

本文编号:1960932

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