GaN宽禁带器件管芯参数提取技术研究

发布时间：2018-06-04 20:16

本文选题：GaN管芯 + 参数提取　；参考：《杭州电子科技大学》2015年硕士论文

【摘要】：随着微波技术的不断发展,微波收发信机不断地向小体积、高功率的方向发展。微波高功率的需求对微波器件提出了更高的要求,GaN作为一种新兴的宽禁带半导体材料,具有禁带宽度大、饱和电子漂移速度快、击穿电场高、介电常数小、热导率高、化学性质稳定和抗辐照能力强等优点,成为高温、高频、大功率微波电子器件领域的首选材料之一。随着微波收发信机小型化要求的提出,其中应用的功率放大模块一般采用体积更小的晶体管管芯进行设计。本文对晶体管管芯S参数的特性以及测试环境进行了分析。分析表明通用的矢量网络分析仪所配备的测试夹具往往不能满足测试管芯S参数性能的测试要求,而特定的管芯参数测试系统价格非常昂贵,因此本文研究利用现有矢量网络分析仪的测试夹具搭建低成本的管芯参数测试电路,然后利用软硬件结合的方法,提取管芯的S参数。这对于利用管芯进行小型化的功率放大器设计具有重要的现实意义。本文首先介绍了目前矢量网络分析仪在管芯参数提取领域中广泛存在的校准误差,分析了各项误差的产生机理,然后针对其中可修正的系统误差列举了误差校准的方法,着重介绍了利用TRL校准方法进行平面电路测试的技术。通过TRL校准,把测试参考面设定在指定的位置,以便对DUT(待测器件)的性能进行测量。随后针对GaN宽禁带管芯参数的提取,设计制作了TRL校准件,提取了GaN管芯在不同静态偏置点下的S参数。最后,对测试结果进行了分析。
[Abstract]:With the development of microwave technology, microwave transceiver is developing to small volume and high power. The demand of high power microwave has put forward higher requirements for microwave devices. As a new kind of wide band gap semiconductor material, gan has large bandgap, fast saturated electron drift, high breakdown electric field, low dielectric constant and high thermal conductivity. Because of its stable chemical properties and strong radiation resistance, it has become one of the preferred materials in the field of high temperature, high frequency and high power microwave electronic devices. With the miniaturization requirement of microwave transceiver, the applied power amplifier module is generally designed with a smaller transistor core. In this paper, the characteristics of S parameters of transistor core and the test environment are analyzed. The analysis shows that the testing fixture equipped with the general vector network analyzer can not meet the test requirements of the performance of the core S parameters, and the price of the specific testing system for the core parameters is very expensive. Therefore, this paper studies how to use the testing fixture of the existing vector network analyzer to build a low-cost testing circuit for the core parameters, and then extracts the S parameters of the tube core by the method of combining software and hardware. This is of great practical significance for the miniaturized power amplifier design using the tube core. In this paper, the calibration error of vector network analyzer in the field of tube core parameter extraction is introduced, the mechanism of each error is analyzed, and the error calibration method is listed for the system error that can be corrected. The technique of plane circuit test using TRL calibration method is introduced emphatically. Through TRL calibration, the test reference plane is set at a specified position to measure the performance of the dut (device to be tested). Then the TRL calibrator is designed for extracting the parameters of GaN wide band gap tube core, and the S parameters of GaN tube core under different static bias points are extracted. Finally, the test results are analyzed.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304;TN722.75

【共引文献】