基于锗硅BiCMOS工艺的低噪声差分放大器设计

发布时间：2018-06-05 08:12

本文选题：无线局域网 + 锗硅　；参考：《微电子学与计算机》2017年05期

【摘要】：针对无线局域网前端接收机2.5GHz的应用,提出了一种硅锗工艺低噪声差分放大器.采用差分级联放大器结构既能抑制输入端的共模噪声信号,又能因级联结构的高增益而抑制电路的噪声,确保电路的高性能;同时选用JAZZ 0.35μm 1P4M锗硅BiCMOS工艺来制作.该放大器能有效地提供了50Ω输入阻抗匹配且具备良好的温度特性.在频点2.5GHz时,放大器的最大小信号电压增益为29.1dB,噪声系数1.3dB,输入/输出回波损耗都优于-11dB,输入3阶交调点为-0.24dBm.在直流电源电压3V供应下,低噪声放大器消耗电流为3.7mA.仿真结果表明,与其他文献相比,该放大器有更高的电压增益和更低的噪声,可以更加有效地应用于无线局域网及相关频点领域.
[Abstract]:A silicon germanium process low noise differential amplifier (LNA) is proposed for the application of WLAN front-end receiver 2.5GHz. The differential cascade amplifier structure can not only suppress the common-mode noise signal at the input end, but also suppress the noise of the circuit because of the high gain of the cascade structure, and ensure the high performance of the circuit. At the same time, the JAZZ 0.35 渭 m 1P4M germanium silicon BiCMOS process is used to fabricate the circuit. The amplifier can effectively provide 50 惟 input impedance matching and has good temperature characteristics. At the frequency point 2.5GHz, the maximum small signal voltage gain of the amplifier is 29.1dB, the noise coefficient is 1.3 dB, the input / output echo loss is better than -11dB, and the input third-order crossover point is -0.24dBm. Under the supply of 3 V DC power supply, the current consumption of LNA is 3.7 Ma. The simulation results show that the amplifier has higher voltage gain and lower noise than other literatures, and it can be applied to WLAN and related frequency area more effectively.
【作者单位】：电子科技大学中山学院;电子科技大学物理电子学院;电子科技大学计算机科学与工程学院;陕西理工大学物理与电信工程学院;
【基金】：国家自然科学基金(11305031) 广东省自然科学基金(S2013010011546) 中山市科学事业费项目(2014A2FC379)
【分类号】：TN722.3

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