软件无线电中宽带射频功率放大器的研究与设计

发布时间：2018-06-05 08:51

本文选题：宽频带 + 射频功率放大器　；参考：《南京邮电大学》2017年硕士论文

【摘要】：无论是在现在还是在未来的无线通信系统中,频段数目的增加要求通信系统的发展必须具备宽频带能力。从发射机的角度来看,功率放大器作为至关重要的组件,直接影响整个系统的带宽、效率、输出功率、工作温度等性能。这使得能够覆盖多个频段,同时具备高效率、高功率的宽带射频功率放大器正成为重要的研究重要课题。本文遵循功放设计步骤,利用辅助设计软件ADS,依据设计方案设计仿真并且实现了一款具有两级放大的宽带GaN HEMT射频功率放大器,并进行了实物加工测试。本文基于EDA软件成功设计了具有两级放大电路的宽带射频功率放大器,驱动级和末级功率放大器均选用科锐生产的系列GaN高电子迁移率晶体管CGH40010F,两级射频放大器工作方式为AB类,频段为2-3GHz。最终测试得到,驱动级功率放大器当输出功率达到30dBm,增益为14dB,末级功率放大器当输出功率达到39dBm,增益为13dB。本文主要内容如下:首先,论述了射频功率放大器的性能指标等理论基础,对关键的设计技术进行分析总结;其次,利用源牵引和负载牵引结合的方法设计了功率放大器的输入输出匹配网络,并结合基础设计理论和实际设计要求完成了宽带射频功率放大器的仿真设计步骤;最后,对驱动级和末级两级功率放大器进行了加工实测,实测结果与仿真结果匹配良好。
[Abstract]:In both the present and the future wireless communication systems, the increase of the number of frequency bands requires that the development of communication systems must have broadband capability. From the point of view of transmitter, power amplifier, as a crucial component, directly affects the bandwidth, efficiency, output power, operating temperature and other performance of the whole system. This makes the broadband RF power amplifier with high efficiency and high power which can cover multiple frequency bands become an important research topic. This paper follows the design steps of power amplifier, designs and implements a wideband GaN HEMT RF power amplifier with two-stage amplification by using the auxiliary design software ADS, and carries out a physical processing test. In this paper, a broadband RF power amplifier with two-stage amplifier is successfully designed based on EDA software. A series of GaN high electron mobility transistors, CGH40010F, are used in both driving and final stage power amplifiers. The two-stage RF amplifiers operate in AB type, with a frequency band of 2-3 GHz. The final test results show that when the output power of the driving stage power amplifier is 30 dBm, the gain is 14 dB, and the final stage power amplifier output power reaches 39 dBm and the gain is 13 dB. The main contents of this paper are as follows: firstly, the theoretical basis of RF power amplifier is discussed, and the key design techniques are analyzed and summarized. The input and output matching network of the power amplifier is designed by combining the source traction and load traction, and the simulation design steps of the wideband RF power amplifier are completed in combination with the basic design theory and practical design requirements. The machining experiments of the driving stage and the final stage power amplifier are carried out, and the measured results match well with the simulation results.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75

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