硅微纳异质结光电器件的研究

发布时间：2018-06-05 18:40

本文选题：硅微纳异质结 + 石墨烯/硅锥　；参考：《合肥工业大学》2017年硕士论文

【摘要】：硅基光电器件由于易与微电子工艺相结合、成本低廉等优点,在芯片集成化以及光控气体传感器方面具有重要的研究意义和应用价值。通过在硅表面引入微纳结构,可有效提高硅的光吸收能力,增大其表面积。本论文制备了两种微纳结构的硅材料——硅锥与黑硅,分别构建石墨烯/硅锥和ZnO纳米棒/黑硅异质结,探索其在光电探测和气敏领域的应用,取得的主要成果如下:1.利用碱法刻蚀制备金字塔形硅锥阵列,通过控制刻蚀液浓度可调控硅锥尺寸。吸收谱和光学模拟显示随着硅锥尺寸的减小,硅锥的吸收率和表面光电流密度得到大幅提高。2.石墨烯/硅锥异质结的整流比约为1.5X104,低理想因子1.66,对近红外波长光反应灵敏,开关比约为104。且高频率(2000 Hz)光照下依然保持快速光响应,上升下降时间分别为96μs和160 μs。3.通过银离子辅助刻蚀硅锥制备得到黑硅,其吸收率相比于平面硅提升了73%。采用低温水溶液法,在黑硅上合成六方纤锌矿结构ZnO纳米棒阵列。通过改变乌洛托品和六水合硝酸锌的比例,可控制ZnO纳米棒直径(100-300 nm)。4. ZnO纳米棒/黑硅异质结的整流比为20,理想因子为15.13。紫外光照下光响应速度为34 ms和18 ms。黑硅的多孔形貌和ZnO的纳米尺寸使得异质结比表面积大幅增加,在室温即显示出灵敏的气体探测性质。
[Abstract]:Silicon based optoelectronic devices are of great significance and application value in chip integration and optically controlled gas sensors due to their advantages such as easy combination with microelectronic technology and low cost. The light absorption ability and surface area of silicon can be improved effectively by introducing micro-nano structure on the surface of silicon. In this thesis, two kinds of silicon materials with micro and nano structure, silicon cone and black silicon, were prepared, and graphene / silicon cone and ZnO nanorod / black silicon heterojunction were constructed, and their applications in photoelectric detection and gas sensing were explored. The main results are as follows: 1. Pyramidal silicon cone arrays were fabricated by alkali etching. The size of silicon cones can be controlled by controlling the etching solution concentration. Absorption spectra and optical simulation show that the absorption rate and surface photocurrent density of silicon cone increase significantly with the decrease of silicon cone size. The rectifying ratio of graphene / silicon cone heterojunction is about 1.5 X 104, and the low ideal factor is 1.66. It is sensitive to near infrared wavelength light reaction and the switching ratio is about 104. And the fast light response was maintained under high frequency (2000 Hz) illumination, and the rising and falling time were 96 渭 s and 160 渭 s 路s ~ (-3), respectively. Black silicon was prepared by silver ion assisted etching of silicon cone. The absorptivity of black silicon was 73% higher than that of planar silicon. ZnO nanorod arrays with hexagonal wurtzite structure were synthesized on black silicon by low temperature aqueous solution method. The diameter of ZnO nanorods can be controlled by changing the ratio of urotropine and zinc nitrate hexahydrate. The rectifying ratio of ZnO nanorod / black silicon heterojunction is 20 and the ideal factor is 15.13. The photoresponse velocities under UV irradiation are 34 Ms and 18 Ms respectively. The porous morphology of black silicon and the nanometer size of ZnO greatly increase the specific surface area of heterojunction and show sensitive gas detection properties at room temperature.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN15

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