一种高性能GaN功率整流器研究

发布时间：2018-06-07 14:31

本文选题：氮化镓(GaN)整流器 + 凹槽栅　；参考：《电子科技大学》2015年硕士论文

【摘要】：氮化镓(GaN)功率器件因能实现高功率、高频率、高线性度、高效率等特点吸引着其在功率器件应用领域的快速发展。整流器在功率应用领域中占有重要地位,开发一种具有低正向开启电压、低反向漏电和高反向耐压能力的高性能GaN功率整流器对于实际应用具有重要意义。本文的工作就是提出具有该高性能的GaN功率整流器。主要研究内容包括:(1)提出一种具有结终端混合阳极结构的GaN功率整流器(AlGaN/GaN Power Rectifier with Edge-Terminated Hybrid Anode,ETH-Rectifier)。ETH-Rectifier的特点为:1、采用刻蚀凹槽的方式优化栅下方AlGa N势垒层的厚度实现对二维电子气浓度(2DEG)的调制,从而实现对器件的正向开启电压的调制。仿真表明ETH-Rectifier的开启电压为0.25V,是常规肖特基二极管(SBD)开启电压的1/6。2、在靠近阴极一侧的肖特基凹槽中引入结终端大幅降低整流器的反向漏电,提高反向耐压。与没有结终端的器件相比,该ETH-Rectifier的反向漏电流在反向偏压为-100V时降低了5个量级。在阳极到阴极的距离Lac=5.0μm时,没有结终端的器件在漏电流为10μA/mm时击穿电压为400V,而ETH-Rectifier在漏电流为1μA/mm时击穿电压达到510V。且引入2.0μm长的场板后,器件耐压值从510V提高至800V,提升了56.86%。并根据BFOM值优化结终端和场板的长分别为1.0μm和2.0μm。(2)根据仿真中ETH-Rectifier存在的问题和参数的优化选取,在实际器件设计中提出优化结构:具有MIS栅混合阳极的GaN功率整流器(AlGaN/GaN Power Rectifier with MIS-Gated Hybrid Anode,MG-HAR)。MG-HAR的特点为:1、同样采用刻蚀凹槽方式调制开启电压,测试表明MG-HAR的开启电压为0.6V,而同比SBD的为0.9V。2、凹槽中全部淀积上栅介质来减小漏电提高耐压。在Lac=5.0μm时,偏压-100V内MG-HAR的反向漏电比SBD低两个量级。定义MG-HAR在漏电为10μA/mm时击穿,则MG-HAR在Lac=5.0μm和10.0μm下击穿电压分别为438V和575V,这已超过Lac=20.0μm下SBD的击穿电压值(512V@1mA/mm)。Lac=20.0μm下MG-HAR的击穿电压更是可以高达1100V,且在790V之前器件漏电都低于1μA/mm。
[Abstract]:Because of its high power, high frequency, high linearity and high efficiency, gallium nitride (gan) power devices have attracted the rapid development in the field of power devices. Rectifier plays an important role in the field of power application. It is of great significance to develop a high performance GaN power rectifier with low forward switching voltage, low reverse leakage and high reverse voltage resistance. The work of this paper is to propose a high performance GaN power rectifier. The main research contents include: 1) A kind of GaN power rectifier with junction terminal mixed anode structure is proposed. The characteristic of AlGaN / GaN Power Rectifier with Edge-Terminated Hybrid Power Rectifier with Edge-Terminated Hybrid ETH-Rectifier is: 1. The thickness of AlGa N barrier layer under gate is optimized by etching grooves. The modulation of electron gas concentration 2DEG), Thus, the forward voltage modulation of the device is realized. The simulation results show that the starting voltage of ETH-Rectifier is 0.25 V, which is 1 / 6. 2 of the conventional Schottky diode (SBD) start voltage. The junction terminal is introduced into the Schottky groove near the cathode side to greatly reduce the reverse leakage of rectifier and improve the reverse voltage. Compared with the devices without junction terminals, the reverse leakage current of the ETH-Rectifier is reduced by 5 orders of magnitude when the reverse bias voltage is -100V. When the distance from anode to cathode is Lac=5.0 渭 m, the breakdown voltage of the device without junction terminal is 400V when the leakage current is 10 渭 A/mm, and the breakdown voltage of ETH-Rectifier is 510V when the leakage current is 1 渭 A/mm. With the addition of 2.0 渭 m long field plate, the voltage resistance of the device is increased from 510V to 800V, which is 56.86. According to the BFOM value, the length of the junction terminal and the field plate are 1.0 渭 m and 2.0 渭 m.m-2, respectively. According to the problems existing in the ETH-Rectifier simulation and the optimization of the parameters, In the design of practical devices, the optimized structure is proposed: the GaN power rectifier with MIS gate hybrid anode has the characteristics of AlGaN / GaN Power Rectifier with MIS-Gated Hybrid Power Rectifier with MIS-Gated Hybrid MG-HARR. MG-HAR is 1: 1, and also modulates the starting voltage by etching grooves. The test results show that the opening voltage of MG-HAR is 0.6V, while that of SBD is 0.9V.2.All of the grooves are deposited with gate dielectrics to reduce leakage and improve the voltage. At Lac=5.0 渭 m, the reverse leakage of MG-HAR at bias voltage -100V is two orders of magnitude lower than that of SBD. The breakdown voltage of MG-HAR is 438V at Lac=5.0 渭 m and 575V at 10.0 渭 m when the leakage current is 10 渭 A/mm, which is higher than that of SBD at Lac=20.0 渭 m. The breakdown voltage of MG-HAR at Lac=20.0 渭 m is higher than that of SBD at 512V 1mApmmmmmmmm, and the breakdown voltage of MG-HAR at 20.0 渭 m can be as high as 1100V, and the leakage voltage of MG-HAR is lower than 1 渭 A / mmm. before 790V, the breakdown voltage of MG-HAR is lower than 1 渭 A / mmm.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN35

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