高线性大功率多量子阱激光器的研究

发布时间：2018-06-08 01:30

本文选题：量子阱 + 应变　；参考：《太原理工大学》2017年硕士论文

【摘要】：近年来互联网流量大幅度增加,同时增加的是对信息高速传输的要求,半导体激光器被广泛应用于通信领域,并且被拓展到军事安全反导,医疗器械,生物工程,工业制件等方面。本文主要对信息技术领域的宽带模拟通信用光收发阵列芯片与模块中的高线性激光器阵列芯片的研发做了具体理论分析、软件模拟、实践实验等,对多量子阱直接调制应变量子阱激光器在材料选取、器件结构方向进行了理论研究和器件模拟。本文选取AlGaInAs材料体系进行了理论研究讨论,研讨有源区量子阱的应变补偿量,量子阱的数量,量子阱的宽度与厚度,激光器工作温度等激光器的结构参数。最终根据电流电压阈值、载流子密度等电学特性、光学特性,设计出激光器有源区多量子阱结构,衬底结构,光栅结构,以及整体结构的基本原理和关键技术,得到我们所需的直接调制大功率高线性量子阱激光器。本论文主要研究的是以下几个方面的工作:1、阐述了半导体激光器的发展,半导体材料发光的原理及特性,包括激射原理以及阈值电流等特性。研究优化了多量子阱激光器的量子阱的数量、温度、应变等,通过理论计算和实际生长优化满足高线性大功率直接调制的最佳应变量子阱,提高激光器的量子效率和微分增益,提高驰豫振荡频率,减小线宽因子,减小频率啁啾,以实现激光器大功率的要求。2、本课题组通过实验分析InGaAsP/InP和AlGaInAs/InP材料体系对载流子限制能力和增益,选取AlGaIn As/InP材料体系制作DFB激光关键工艺。并研究了激光器微分增益和量子效率,以实现激光器的高频调制特性。3、研究光栅的结构。通过光栅结构改变造成的激光质量,设计研究增益耦合型光栅结构,利用E-beam获取不同周期的相移光栅,低损伤ICP干法刻蚀工艺技术。使得“烧孔效应”得到明显改善,极大提高了线性指标,控制光栅周期,实现波长精确控制。4、在材料生长方面,在现有MOCVD进行材料外延生长技术的基础上,进一步研究生长工艺,从生长条件分析,生长材料选择确定生长方案,制备出满足高线性大功率直接调制要求性能的多量子阱结构,提供高质量外延片。5、在材料和器件结构上,利用ALDS激光材料和结构设计仿真软件,进行高线性大功率直接调制应变多量子阱激光器各项性能的优化设计,得出阈值电流等的特性曲线。最终实现1310nm波段(高频响应覆盖12GHz以下频率范围)模拟通信大功率(单信道芯片出光功率大于10d Bm)激光器芯片样品。实验结果表明,所设计激光芯片具有优良的阈值电流、输出功率等参数特性。
[Abstract]:In recent years, Internet traffic has increased significantly, while the requirements for high-speed information transmission have been increased. Semiconductor lasers have been widely used in the field of communications, and have been extended to military security, antimissile, medical devices, and bioengineering. Industrial parts, etc. This paper mainly focuses on the research and development of broadband analog communication optical transceiver array chip and high linearity laser array chip in the field of information technology, such as theoretical analysis, software simulation, practical experiment, etc. The theoretical study and device simulation of multiple quantum well direct-modulated strained quantum well lasers in material selection and device structure direction have been carried out. In this paper, AlGaInAs system is selected for theoretical study, and the structure parameters of the laser, such as strain compensation, quantum well number, width and thickness of quantum well, laser operating temperature and so on, are discussed. Finally, according to the current and voltage threshold, carrier density and other electrical and optical characteristics, the basic principles and key technologies of the active region of the laser are designed, such as the structure of multiple quantum wells, the substrate structure, the grating structure, and the whole structure. The direct modulation high power and high linear quantum well lasers are obtained. This paper mainly studies the following aspects of work: 1, describes the development of semiconductor lasers, the principle and characteristics of semiconductor materials luminescence, including the principle of emission and threshold current characteristics. The quantum well number, temperature and strain of multiple quantum well lasers are optimized. By theoretical calculation and practical growth, the optimal strain quantum wells satisfying high linear and high power direct modulation are optimized to improve the quantum efficiency and differential gain of the laser. In order to meet the requirement of high power, the relaxation oscillation frequency, the linewidth factor and the frequency chirp are increased. The experiment results show that the InGaAsP / InP and AlGaInAs / InP / InP systems can limit the carrier capacity and gain. Select AlGaIn as / InP system to fabricate the key technology of DFB laser. The differential gain and quantum efficiency of the laser are studied in order to realize the high frequency modulation characteristics of the laser. The structure of the grating is studied. Through the laser quality caused by the change of the grating structure, the gain coupled grating structure is designed and studied. The phase shift grating with different periods is obtained by using E-beam, and the low damage ICP dry etching technique is used. The "hole burning effect" is obviously improved, the linear index is greatly improved, the grating period is controlled, and the wavelength is precisely controlled. In the aspect of material growth, on the basis of the existing MOCVD epitaxial growth technology, Further study on the growth process, from the analysis of growth conditions, the selection of growth materials to determine the growth plan, to prepare a high linear high power direct modulation performance of multiple quantum wells structure, to provide high quality epitaxial wafer. 5, in material and device structure, Using the simulation software of ALDS laser material and structure design, the optimization design of the performance of high linear high power direct modulation strain multiple quantum well laser is carried out, and the characteristic curve of threshold current is obtained. Finally, the 1310nm band (high frequency response covering the frequency range below 12GHz) is realized to simulate the high power (the output power of single channel chip is more than 10dBm) laser chip sample. The experimental results show that the designed laser chip has excellent threshold current, output power and other parameters.
【学位授予单位】：太原理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248

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