表面传导电子发射显示器件的负阻特性研究

发布时间：2018-06-12 04:33

本文选题：表面传导电子发射 + 负电阻特性　；参考：《西安工业大学》2015年硕士论文

【摘要】：表面传导电子发射显示器件(SED)在能耗、分辨率、视角等方面较其他平板显示(LCD/PDP)存在明显的优势。但是,表面传导电子发射显示器件的阴极电子发射阵列的发射效率以及寿命阻碍了其发展,并且有研究者发现表面传导电子发射显示器件在电形成时,其传导电流与器件电压呈现重复的压控负阻(VCNR)现象。而且VCNR与器件的发射电流存在某种联系——不出现VCNR则没有发射电流。因此,揭示VCNR的形成机理且理清VCNR现象与电子发射特性的内在规律可以为制备出性能优异的SED提供理论基础。本文以颗粒膜AlN/Al作为表面传导电子发射显示器件的阴极发射极材料,通过真空电形成,研究VCNR特性及其形成机理。采用磁控溅射和光刻技术制备发射阴极为AlN/Al材料的表面传导显示原理器件,研究了电形成次数、颗粒膜制备工艺、器件结构、电形成环境、外加电场以及颗粒膜材料成份等,对器件的电学特性影响,根据电学特性的演变规律,探讨了颗粒膜的电子发射机理以及器件VCNR特性,主要获得以下结论：研究了不同电形成环境对VCNR的影响。实验表明在低真空和高真空两种不同真空环境下,给器件加载相同的电压电形成所呈现的现象不相同。具体表现为在低真空下,器件的传导电流达到电流源额定上限且VCNR现象不可重复,传导电流变化剧烈且在薄膜阴极形成一条远大于2μm的狭缝：在高真空下,器件传导电流很稳定且VCNR现象可重复,并在薄膜表面形成一条狭缝且宽度为952nm。研究了不同外加电场模式下器件电学特性的影响,对以Al-AlN为阴极发射极薄膜的基底上的背电极分别加载不同电压(-5V、0V、+5V)。研究其对电子发射效率的影响以及对VCNR现象的影响。实验发现加载-5V电压时,器件的VCNR现象较明显,器件的发射电流和发射效率增加。相反加载+5V时,器件的发射电流和发射效率下降。研究了不同器件结构对电学特性的影响,即制备不同膜层结构的器件1(先制备铜电极后制备发射阴极)、器件2(先制备发射阴极再制备铜电极)。实验表明器件1的传导电流低于器件2,出现VCNR现象时对应的器件电压大于器件2,且传导电流稳定,形成的狭缝尺寸适合表面电子发射。研究了材料成份对器件电学特性的影响。在气体流量N2：Ar为3:90sccm的前提下,利用磁控溅射设备分别在工作气压为0.85Pa和1Pa下,制备了两种不同性质的发射极薄膜(颗粒膜),然后在真空中进行电形成。结果表明0.85Pa下制备的颗粒膜导电性良好,但是传导电流比较大且电形成后狭缝大于2μm,且观测不到发射电流。其出现了VCNR现象较1Pa的早许多(相对于器件电压)。但是1Pa下制备的器件与其相反,传导电流比较稳定且形成的狭缝较为理想在2μm以内,出现了明显的发射电流。利用扫描式电子显微镜X光微区分析(SEM-EDS)研究了电形成之后器件的颗粒膜元素含量的变化,结果发现器件颗粒膜电形成后,A1元素发生了改变且其含量增加了4.29%。结合以上不同条件下器件宏观电学特性以及颗粒膜的变化,确定器件VCNR特性和器件颗粒膜中导电元素A1含量直接相关。
[Abstract]:The surface conduction electron emission display (SED) has obvious advantages over other flat panel display (LCD/PDP) in energy consumption, resolution, and angle of view. However, the emission efficiency and life of the cathode electron emission array of the surface conduction electronic emission display device have hindered its development, and some researchers found the surface conduction electron emission display. When the device is formed, the conduction current and the device voltage present a repetitive pressure controlled negative resistance (VCNR) phenomenon. And there is some connection between the VCNR and the emission current of the device - no VCNR does not appear. Therefore, it is possible to reveal the formation mechanism of the VCNR and to clear the inherent laws of the VCNR phenomenon and the electron emission characteristics. The different SED provides the theoretical basis. In this paper, the granular membrane AlN/Al is used as the cathode emitter material for the surface conduction electron emission display device. The characteristics and formation mechanism of the VCNR are studied by vacuum electricity formation. The surface conduction display principle of the cathode is prepared by magnetron sputtering and photolithography, and the electrical formation time is studied. The preparation technology of the granular film, the structure of the device, the electric forming environment, the external electric field and the material composition of the granular film, and the influence on the electrical characteristics of the device and the evolution of the electrical characteristics, the electronic emission mechanism of the granular film and the VCNR characteristics of the device are discussed. The main results are as follows: the influence of different electric forming environment on the VCNR is studied. The experimental results show that under low vacuum and high vacuum two different vacuum conditions, the phenomenon of the same voltage and electric formation is different. It is shown that under low vacuum, the conduction current of the device reaches the rated upper limit of the current source and the VCNR phenomenon is not repeatable, the conduction current changes violently and is far greater than the film cathode. The 2 m slit: under high vacuum, the conduction current of the device is very stable and the VCNR phenomenon can be repeated, and a slit on the surface of the film is formed and the width is 952nm.. The effects of the electrical characteristics of the devices under different applied electric field modes are studied. The different voltages (-5V, 0V, +5V) on the back electrodes on the substrate of the cathode emitter film with Al-AlN are respectively loaded. The effect on the electron emission efficiency and the effect on the VCNR phenomenon are studied. The experiment shows that when loading -5V voltage, the VCNR phenomenon of the device is more obvious, the emission current and the emission efficiency of the device are increased. On the contrary, the emission current and the emission efficiency of the device are decreased. The influence of different device structures on the electrical properties is studied, that is, the preparation is not prepared. The device 1 with the same layer structure (preparation of the cathode after preparing the copper electrode), device 2 (first preparing the cathode for the emission cathode preparation). The experiment shows that the conduction current of the device 1 is lower than that of the device 2. The voltage of the device corresponding to the VCNR phenomenon is greater than the device 2, and the conduction current is stable, and the size of the slit is suitable for the surface electron emission. Under the condition of gas flow N2:Ar of 3:90sccm, two kinds of emitter films (particle films) with different properties were prepared under the condition of the gas flow rate of 0.85Pa and 1Pa, and the electric formation was then formed in the vacuum. The results showed that the electrical conductivity of the granular films prepared under 0.85Pa was good, but the results showed that the electrical conductivity of the films was good, but the results showed that the electrical conductivity of the film prepared under 0.85Pa was good. It is that the conduction current is larger and the electric current is more than 2 mu m, and the emission current is not observed. It appears that the VCNR phenomenon is much earlier than the 1Pa (relative to the device voltage). But the device prepared under the 1Pa is opposite, the conduction current is more stable and the slit is less than 2 mu m, and the obvious emission current appears. X optical microanalysis (SEM-EDS) is used to study the changes in the content of the elements in the particles after the electrical formation. The results show that the A1 element changes after the formation of the particle membrane of the device and its content increases the macroscopic electrical properties of the devices and the change of the granular film under the different conditions of the 4.29%. binding. The VCNR characteristics of the device are determined and the characteristics of the device are determined. The content of conductive element A1 in granular film is directly related.
【学位授予单位】：西安工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN141

【参考文献】