红外雪崩光电二极管暗电流成份分析和机理研究

发布时间：2018-06-13 02:26

本文选题：红外探测器 + 数值模拟　；参考：《中国科学院大学(中国科学院上海技术物理研究所)》2017年硕士论文

【摘要】：与其他光电倍增器件相比,雪崩光电二极管(APD)具有量子效率高、探测效率高、结构稳定、覆盖波段广、探测速率快等优点。以APD为基础制备的雪崩器件已经在很多军事以及民用领域中得到了广泛应用。随着第三代红外成像探测器概念的提出,研发具有低噪声、低成本、高灵敏度、高温工作的高性能雪崩器件已经成为第三代红外成像探测器发展的一个主要方向。目前APD面临的主要问题是暗电流较大,对器件的载流子输运以及光增益产生机制均缺乏了解,导致研发成本与周期均居高不下。有鉴于此,本文使用Sentaurus-TCAD成功对铟镓砷以及碲镉汞红外雪崩光电二极管进行了建模仿真,以理论分析为器件的制备提供理论指导与结构优化,旨在降低器件研制经费与时间,提高器件性能。具体研究内容包括:1.通过数值模拟的方法细化分析出了SAGCM InGaAs/InP APD器件暗电流的成分,结果表明SRH暗电流在各偏压范围下始终主导暗电流。对于InGaAs吸收层中复合中心对暗电流的影响的分析显示器件的暗电流特性明显受到复合中心浓度与位置的制约。对于少子寿命和暗电流之间的联系进行了分析,研究结果可用于在实际器件制备与测试中对器件的少子寿命进行估算。2.通过数值模拟的方法对台面结与平面结两种结构的HgCdTe APD综合性能进行了分析,结果表明其暗电流特性极大地受到内建电场的影响。另外通过调整优化倍增区厚度,可以影响到器件的暗电流和增益,应当根据具体的工作需求来选择合适的结构参数。最后对平面结结角处局域电场的分析表明,通过改善工艺来降低结角尖锐程度可以有效降低器件的暗电流。同时对与台面结的分析表明,其暗电流特性极大地受到倍增区掺杂浓度的制约。研究结果可用于指导碲镉汞APD器件结构的设计和优化。
[Abstract]:Compared with other photomultiplier devices, avalanche photodiode (APD) has the advantages of high quantum efficiency, high detection efficiency, stable structure, wide coverage and fast detection rate. The avalanche device based on APD has been widely used in many military and civil fields. With the concept of third generation infrared imaging detectors, the avalanche diode is widely used. It is proposed that the development of high performance avalanche devices with low noise, low cost, high sensitivity and high temperature has become a major direction for the development of the third generation infrared imaging detectors. The main problem facing APD is that the dark current is large, the carrier transport and the optical gain generation mechanism are lack of understanding, resulting in the cost of research and development and the cost of research and development. In view of this, the modeling and Simulation of indium and gallium arsenic and mercury cadmium telluride avalanche photodiode are successfully modeled by Sentaurus-TCAD. Theoretical analysis is used to provide theoretical guidance and structural optimization for the preparation of devices. The purpose is to reduce the cost and time of device development and improve the performance of the devices. The specific research contents include: 1. links. The dark current composition of the SAGCM InGaAs/InP APD device is refined and analyzed by the method of over numerical simulation. The result shows that the dark current of the SRH dark current dominates the dark current throughout the bias range. The analysis of the influence of the composite center on the dark current in the InGaAs absorption layer shows that the dark current characteristic of the device is obviously influenced by the concentration and position of the complex center. The relationship between the lifetime and the dark current is analyzed. The results can be used to estimate the lifetime of the devices in the actual device preparation and test. The HgCdTe APD comprehensive performance of the two structures of the table junction and the plane junction is analyzed by the numerical simulation method. The results show that the dark current characteristic is very great. In addition, by adjusting the thickness of the multiplier area, the dark current and gain of the device can be affected, and the appropriate structural parameters should be selected according to the specific work requirements. Finally, the analysis of the local electric field at the plane junction angle shows that the device can effectively reduce the device by improving the process to reduce the angle of the junction. The dark current analysis shows that the dark current characteristics are greatly restricted by the doping concentration in the multiplier region. The results can be used to guide the design and optimization of the structure of HgCdTe APD devices.
【学位授予单位】：中国科学院大学(中国科学院上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN215;TN312.7

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