微波开关电路的设计与应用

发布时间：2018-06-13 07:00

本文选题：PIN二极管 + GaN　；参考：《南京理工大学》2015年硕士论文

【摘要】：微波开关是微波控制电路中的重要组成部分,广泛应用于雷达、卫星、通信、电子对抗及测量等方面,其主要作用是控制信号的通断或者完成信号在不同信道间的切换。随着各类半导体晶体管的不断发展,目前主要用于微波开关设计的控制器件有PIN二极管、GaN高电子迁移率晶体管(HEMT)等。本文应用两种不同管子的控制器件分别设计了单刀单掷(SPST)及单刀双掷(SPDT) 开关,插入损耗、隔离度及回波损耗等性能良好。本论文的主要工作如下：1、对基于PIN二极管的开关设计方法进行了较为深入的研究,结合微带电路、有源电路等理论,折中考虑串联型和并联型开关的优缺点,最终选择采用串-并结合型结构来设计单刀单掷(SPST)开关以及适用于L波段T/R组件的单刀双掷(SPDT)开关。加工并测试了基于PCB的开关电路,测试结果与仿真结果较为吻合,部分指标有所恶化,但是总体满足指标要求,性能较好。2、以GaN工艺为设计平台,研究了GaN HEMT管的基本特性,对其所构成的开关电路进行了基本原理分析,结合新颖的具有带阻滤波性能的R-C-R电路结构设计了基于Dual-gate GaN HEMT管的高隔离度开关单片,在63%的带宽范围内隔离度均大于60 dB。3、在前面开关设计的基础上,研究了多状态阻抗匹配网络的分析与设计。该结构主要应用于一分四功率分配器、四阵列天线等,用较少数量的开关,实现在不同状态下的阻抗匹配,电路结构紧凑,易于实现。本论文提出的基于PIN二极管和GaN HEMT管的开关电路,插入损耗小、隔离度高、结构紧凑、易于实现,可以应用于一些通讯和雷达系统中。
[Abstract]:Microwave switch is an important part of microwave control circuit. It is widely used in radar, satellite, communication, electronic countermeasure and measurement. Its main function is to control the signal on and off or to complete the signal switching between different channels. With the development of semiconductor transistors, the control devices mainly used in the design of microwave switches are PIN diodes, gan high electron mobility transistors (HEMTs) and so on. In this paper, two kinds of control devices of different tubes are used to design SPST and SPDTT switches respectively. The insertion loss, isolation and echo loss are good. The main work of this thesis is as follows: 1. The design method of switch based on PIN diode is studied deeply. Combining the theory of microstrip circuit and active circuit, the advantages and disadvantages of series switch and parallel switch are considered. Finally, a series-and-combination structure is adopted to design the SPST switch and the SPDTT switch which is suitable for L band T / R module. The PCB based switch circuit is fabricated and tested. The test results are in good agreement with the simulation results, and some indexes are deteriorated. However, the performance of GaN HEMT transistor is studied on the basis of gan process. The basic principle of the switch circuit is analyzed, and the high isolation switch monolithic based on Dual-gate gan HEMT transistor is designed in combination with a novel R-C-R circuit structure with bandstop filtering performance. The isolation is greater than 60dB.3in the bandwidth range of 63%. Based on the previous switch design, the analysis and design of the multi-state impedance matching network are studied. The structure is mainly used in one four power divider, four array antennas and so on. With a small number of switches, impedance matching in different states is realized. The circuit structure is compact and easy to realize. The switch circuit based on PIN diode and gan HEMT proposed in this paper has the advantages of low insertion loss, high isolation, compact structure and easy implementation. It can be used in some communication and radar systems.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN015

【引证文献】