可穿戴纤维状有机微纳单晶场效应晶体管及其电路的研究

发布时间：2018-06-15 08:35

本文选题：可穿戴电子器件 + 纤维状结构　；参考：《东北师范大学》2017年硕士论文

【摘要】：作为现代集成电路的基本构建单元,场效应晶体管被集成到纺织品中而形成的可穿戴电子产品是至关重要的发展趋势。其中有机单晶场效应晶体管因在纤维状衬底上能够表现出操作温度低,电学性能优异,质轻和柔性好的独特优势而更具发展潜力。本文分别采用了传统的“直接构筑法”(即层层堆叠技术)和新颖的“拼图技术路线”在直径仅为15μm的超细金丝上成功地制备出了纤维状有机微纳单晶场效应晶体管及其逻辑电路。在传统的“直接构筑法”制备器件的过程中,我们通过提拉法制备绝缘层,探针机械转移有机单晶和贴金膜法制备源漏电极。我们在直径仅为15μm的超细金丝上,获得了目前报道的最小尺寸的,迁移率高达0.4 cm2V-1s-1的纤维状Cu Pc纳米带场效应晶体管。为了避免传统制备方法中的不足,我们发展了一种更加简单有效的“拼图技术路线”来制备器件。该方法首先在平面衬底上制备可剥离的器件,随后剥离转移到纤维状衬底上。我们通过该技术不仅在15μm的金丝上制备出了迁移率分别为0.22 cm2V-1s-1和0.08 cm2V-1s-1的纤维状Cu Pc和F16Cu Pc纳米带场效应晶体管,而且也首次制备出基于Cu Pc/F16Cu Pc纳米带的纤维状互补型反相器。该电路不仅能够实现正常的逆变器功能而且表现出了分别高达8.2和7.7的增益值。为了研究器件对机械应力的耐久性问题,我们对器件也进行了弯曲性能测试,在弯曲半径为0.5 cm时我们的器件仍然表现出较高的晶体管性能。此外,为了凸显采用拼图技术路线制备纤维状有机场效应晶体管的优势,我们也对其制备流程进行了进一步的优化研究。
[Abstract]:As the basic building unit of modern integrated circuits, field effect transistors (FET) have been integrated into textiles to form wearable electronic products. Organic single crystal field-effect transistors (OSFTs) have the advantages of low operating temperature, excellent electrical properties, light weight and good flexibility on fibrous substrates. In this paper, the conventional "direct building method" (layer stacking technique) and the novel "mosaic technique" have been used to successfully fabricate fibrous organic nanocrystalline (FET) crystals on ultrafine gold wires with a diameter of only 15 渭 m. Body tube and its logic circuit. In the process of fabricating the device by the traditional "direct building method", we prepare the insulating layer by Czochralski method, transfer organic single crystal by the probe mechanically and fabricate the source leakage electrode by the method of gold coating. On the ultrafine gold wire with a diameter of only 15 渭 m, we have obtained a Field-type Cu Pc nanbbon field-effect transistor with a mobility up to 0.4 cm2V-1s-1 and the smallest size reported at present. In order to avoid the shortcomings of the traditional preparation methods, we developed a more simple and effective "jigsaw puzzle" to fabricate devices. The method firstly fabricates the detachable device on the flat substrate, then the peeling is transferred to the fibrous substrate. Through this technique, we not only fabricated fibrous Cu Pc and F16Cu Pc F16Cu Pc field effect transistors with mobility of 0.22 cm2V-1s-1 and 0.08 cm2V-1s-1 on 15 渭 m gold wires, but also prepared the fiber complementary inverters based on Cu Pc / F16Cu Pc nanobelts for the first time. The circuit can not only achieve normal inverter function but also show gains of 8.2 and 7.7 respectively. In order to study the durability of the device to mechanical stress, the bending performance of the device is also tested. Our device still exhibits high transistor performance when the bending radius is 0.5 cm. In addition, in order to highlight the advantage of using jigsaw puzzle technology to fabricate fibrous airfield effect transistors, we have further optimized the preparation process.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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