搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究

发布时间：2018-06-17 12:22

本文选题：搭桥晶粒 + 多晶硅　；参考：《液晶与显示》2017年02期

【摘要】：本文主要研究了搭桥晶粒(BG)多晶硅薄膜晶体管(TFT)在栅交流电应力下的退化行为和退化机制。在栅交流应力下,动态热载流子效应主导了器件的退化。器件退化只与栅脉冲下降沿有关。越快的下降沿带来越大的动态热载流子退化。比起普通多晶硅TFT,BG多晶硅TFT的热载流子退化大幅度减弱。通过选择性的掺杂注入BG线,沟道中形成的PN结在反向偏置时可以有效分担栅交流电应力带来的电压差,从而减弱动态热载子退化。辅以瞬态模拟结果,栅交流电应力下的退化机制被阐明。所有的测试结果都表明这种高性能高可靠性的BG多晶硅TFT在片上系统应用中具有很大的应用前景。
[Abstract]:In this paper, the degradation behavior and degradation mechanism of BG- (BG) polycrystalline silicon thin film transistor (TFTT) under gate alternating current stress are studied. The dynamic hot carrier effect dominates the degradation of the device under gate alternating current stress. The degradation of the device is only related to the descending edge of the gate pulse. The faster the descent edge, the larger the dynamic hot carrier degradation. Compared with the conventional polysilicon TFTBG, the hot carrier degradation of the polysilicon TFT is much weaker than that of the conventional polysilicon TFTBG. By selectively doping and injecting BG lines, the PN junction formed in the channel can effectively share the voltage difference caused by the gate alternating current stress in the reverse bias, thus reducing the degradation of the dynamic thermal carrier. Coupled with transient simulation results, the degradation mechanism under gate alternating current stress is clarified. All the test results show that the high performance and high reliability BG polysilicon TFT has great application prospect in the on-chip system.
【作者单位】：香港科技大学先进显示与光电子技术国家重点实验室;
【基金】：香港研究资助局主题研究计划项目(NO.T23-713/11-1)~~
【分类号】：TN321.5

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