浸没单元回收单元结构优化

发布时间：2018-06-19 00:51

本文选题：浸没式光刻 + 浸没单元回收结构　；参考：《浙江大学》2017年硕士论文

【摘要】：浸没式光刻作为45nm以下应用最广的光刻技术,如何满足浸没式光刻高生产率的要求,提高浸没式光刻的扫描速度,是目前浸没式光刻的核心问题。投影物镜和硅片缝隙间的流场在高速扫描运动下的密封性和稳定性限制了浸没式光刻机的产率和良品率。安装在投影物镜和硅片间的浸没单元的回收单元在回收负压的作用下增强对浸没液体的束缚能力,是保证浸没流场的更新、硅片和物镜之.间缝隙的密封的关键技术。通过优化浸没单元回收结构可以显著提高流场内流体的密封和稳定,从而提高浸没式光刻的扫描速度,本文以浸没单元回收单元中的回收结构为研究对象,完成了以下工作:(1)回收结构的基础理论研究及对比仿真。建立了与浸没单元回收结构相似的回收孔模型,从回收孔模型中提取出影响临界扫描速度的4个主要设计参数,通过对4个主要设计参数的基础理论研究和数值对比仿真,得到能够提高浸没单元扫描速度的回收孔结构。(2)优化回收结构的实验方案研究。在回收小孔模型的基础上,设计了回收孔主要设计参数的参数对比实验方案,并根据浸没单元的实际需求设计了一系列的参量,最后将这些参量按照正交实验法设计实验方案。(3)回收结构的优化实验研究。设计了更易于实验的回收小孔模型并搭建了相应的测试平台,得到不同的回收孔结构在相同实验条件下的重复性实验结果,然后按照正交实验结果分析方法得出在六种不同的实验条件下的临界扫描速度最高的回收孔结构。(4)最后将从回收小孔模型中得到的最优的回收孔结构参数应用到浸没单元的回收单元中,优化浸没单元回收单元的回收结构,提高浸没式光刻的扫描速度。
[Abstract]:As the most widely used lithography technology under 45nm, immersion lithography is the most widely used lithography. How to meet the high productivity of immersion lithography and improve the scanning speed of immersion lithography is the core problem of immersion lithography. The sealing and stability of the flow field between the projection lens and silicon wafer in the high-speed scanning motion limits the immersion lithography. The yield and good rate. The recovery unit installed between the projection lens and the silicon wafer can enhance the binding capacity to the submerged liquid under the effect of the negative pressure. It is the key technology to ensure the updating of the submerged flow field and the seal of the gap between the silicon chip and the objective lens. The flow internal flow can be significantly improved by the optimization of the recovery structure of the immersion unit. The sealing and stability of the body can improve the scanning speed of the immersion lithography. In this paper, the recovery structure in the recovery unit of the immersion unit is taken as the research object. The following work has been completed: (1) the basic theoretical research and comparison simulation of the recovery structure. A recovery hole model similar to the recovery structure of the immersion unit is established and extracted from the recovery hole model. 4 main design parameters affecting the critical scanning speed are obtained. Through the basic theory research and numerical simulation of 4 main design parameters, the recovery hole structure which can improve the scanning speed of the immersion unit is obtained. (2) the experimental scheme for optimizing the recovery structure is studied. On the basis of the recovery of the small hole mold type, the main design parameters of the recovery hole are designed. A series of parameters are designed according to the actual requirements of the immersion unit. Finally, the parameters are designed by the orthogonal experimental method. (3) the experimental research on the optimization of the recovery structure is carried out. A more easy to experiment reclaim hole model is designed and the corresponding test platform is set up to get different recovery holes structure. The results of repeated experiment under the same experimental conditions, and then according to the orthogonal experimental results analysis method to obtain the maximum critical scanning speed of the recovery hole structure under six different experimental conditions. (4) finally, the optimum recovery hole structure parameters obtained from the recovery small hole model are applied to the recovery unit of the immersion unit. The recovery structure of the immersion unit recovery unit improves the scanning speed of immersion lithography.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN305.7

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