一维压电半导体杆的力学行为研究

发布时间：2018-06-19 17:20

本文选题：压电半导体杆 + 解析解　；参考：《浙江大学》2017年硕士论文

【摘要】：压电半导体是一种兼具压电性和半导体特性双重物理属性的材料。在外力作用下,压电半导体内部产生的压电势,它能对半导体特性进行有效调控,这使压电半导体材料在未来新型功能电子器件上有广阔应用前景。对压电半导体材料的力学行为进行理论研究,可为新型压电半导体器件的创新开发和结构设计提供理论指导。为此,本文针对一维压电半导体杆,开展了如下三个方面的工作:一、针对两端自由的一维压电半导体杆,考虑电场和载流子的非线性耦合项,导出了其自平衡状态下的解析解。在自平衡状态下,压电半导体杆一侧处于拉伸状态,另一侧处于压缩状态,杆内的机械场、电场和载流子分布在杆的两端区域变化十分剧烈,而在杆的中间区域变化比较平缓。二、针对两端受轴向拉力的一维压电半导体杆,把电流密度的非线性项进行线性化处理,导出其在轴向拉力作用下的解析解,理论研究了一维压电半导体杆在轴向拉力作用下的力学行为。压电半导体杆内的机械场、电场和载流子的分布在杆两端区域变化剧烈,在杆中间区域变化则较小,并且杆内的电场、电位移、应变和位移都是关于杆的中点对称分布的。三、针对一端固定一端自由的一维压电半导体杆,把漂移电流的非线性项进行线性化处理,导出了其在自由端受剪力作用下的解析解,理论研究了一维压电半导体弯曲变形的力学行为。杆内电势和载流子的分布为在杆的固定端附近区域变化较为剧烈,随着远离固定端,电势和载流子趋向于一个恒定值。
[Abstract]:Piezoelectric semiconductor is a kind of material with both piezoelectric and semiconductor properties. The piezoelectric potential produced by the piezoelectric semiconductor under external force can effectively regulate the characteristics of the semiconductor, which makes the piezoelectric semiconductor material have a broad application prospect in the future new functional electronic devices. The theoretical study on the mechanical behavior of piezoelectric semiconductor materials can provide theoretical guidance for the innovative development and structural design of new piezoelectric semiconductor devices. For this reason, this paper has carried out the following three aspects of work for one-dimensional piezoelectric semiconductor rod: first, considering the nonlinear coupling term of electric field and carrier for the one-dimensional piezoelectric semiconductor rod with free ends. The analytical solution in the state of self-equilibrium is derived. In the state of self-equilibrium, the piezoelectric semiconductor rod is in the state of tension on one side and compression on the other side. The mechanical field, electric field and carrier distribution in the two ends of the rod vary dramatically, but the change in the middle region of the rod is relatively gentle. Secondly, the nonlinear term of current density is linearized for one dimensional piezoelectric semiconductor rod with axial tension at both ends, and its analytical solution under axial tension is derived. The mechanical behavior of one-dimensional piezoelectric semiconductor rod under axial tension is studied theoretically. In the mechanical field of piezoelectric semiconductor rod, the distribution of electric field and carrier varies dramatically in the two ends of the rod, but in the middle of the rod, the variation is small, and the electric field, electric displacement, strain and displacement in the rod are all about the symmetrical distribution of the middle point of the rod. Thirdly, the nonlinear term of drift current is linearized for one dimensional piezoelectric semiconductor rod with one end fixed and one end free, and its analytical solution under shear force at the free end is derived. The mechanical behavior of one-dimensional piezoelectric semiconductor bending deformation is studied theoretically. The distribution of electric potential and carrier in the rod varies sharply near the fixed end of the rod. With the distance from the fixed end, the potential and carrier tend to a constant value.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.9

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