WOLED器件结构与性能关系的研究

发布时间：2018-06-19 17:21

本文选题：白光OLED + 载流子传输　；参考：《南京邮电大学》2017年硕士论文

【摘要】：由于白光有机发光二极管(WOLED)在效率、亮度、功耗、视角、响应速度、超薄超轻、可柔性化、固态发光等方面展现出的优异性能,自诞生以来,得到了广泛关注。虽然对WOLED的研究工作已经取得了一定的进展,但是由于WOLED器件发光机理较为复杂,影响因素比较多,性能不容易调控,因此对于WOLED的工作机制还需要更为深入的探索。本文通过制备简单结构WOLED,单发光层WOLED和多发光层WOLED,分析了材料性质、有机层厚度、界面势垒等因素对于WOLED载流子的传输与复合的影响,通过一系列实验,分析载流子捕获与能量传递两种发光机制。论文的具体分为以下几个部分:1.制备简单结构白光器件。器件中的有机层只有发光层,变化以CBP:Ir(MPCPPZ)3,Tmpypb:Firpic作为橙光和蓝光发光层的厚度,研究发光层厚度对于载流子传输及复合区域的影响。制备的简单结构WOLED,CIE(0.36,0.38),最大电流效率21.3 cd/A,启亮电压5.5 V。但是,在简单结构WOLED中要想同时优化效率和启亮电压是十分困难的,我们通过引入电子传输层Tmpypb解决了这一问题,将启亮电压降至3.3 V,最大电流效率23.59 cd/A,CIE(0.36,0.38)。2.制备多发光层白光器件。以CBP和TCTA分别作为空穴传输层探讨空穴传输层/发光层界面势垒对于载流子传输的影响,变化蓝光主体Tmpypb为TCTA,研究发光主体载流子传输性质对于复合区域的影响以及发光层之间的相互作用。最终优化出结构为MoO3(5 nm)/NPB(60 nm)/TCTA(5 nm)/CBP:Ir(MPCPPZ)3(6%,10 nm)/TCTA:Firpic(8%,10 nm)/Tmpypb(35 nm)/Cs2CO3(2 nm)/Al(120nm)的多发光层WOLED,器件最大电流效率可以达到25.25 cd/A,CIE(0.32,0.33),启亮电压3.5 V。3.制备单发光层白光器件。通过选择三线态能级不同的CBP和TCTA做主体材料制备单发光层WOLED,分析单电子器件、发射吸收光谱等表征实验,深入研究单发光层WOLED中能量传递和载流子捕获这两种发光机制及其对器件性能的影响,并且,通过变化空穴传输层材料,探讨主体材料和空穴传输层的关系对于单发光层WOLED的影响。优化出结构为ITO/MoO3(5 nm)/CBP(35 nm)/CBP:Firpic:(PQxD)2Ir(TP)(5%,0.4%,15 nm)/Tmpypb(35 nm)/Cs2CO3(2 nm)/Al(120 nm)的单发光层WOLED,最大电流效率为38.81 cd/A,启亮电压3.1 V,CIE(0.32,0.39)。
[Abstract]:Due to its excellent performance in efficiency, brightness, power consumption, angle of view, response speed, ultra-thin and ultra-light, flexibility and solid state luminescence, white organic light emitting diodes have attracted wide attention since its birth. Although some progress has been made in the research of WOLED, the mechanism of WOLED is more complex, the influence factors are more, and the performance is not easy to control, so the working mechanism of WOLED still needs to be further explored. In this paper, simple structure WOLED, single light-emitting layer WOLED and multi-light-emitting layer WOLED are prepared. The effects of material properties, organic layer thickness and interface barrier on the transport and recombination of WOLED carriers are analyzed, and a series of experiments are carried out. Two mechanisms of carrier capture and energy transfer are analyzed. The thesis is divided into the following parts: 1. The white light device with simple structure was fabricated. There is only luminescence layer in the organic layer of the device. The thickness of the orange and blue luminescent layer is CBP: Irn MPCPPZ _ 3 and Tmpypb: Firpic. The influence of the luminous layer thickness on the carrier transport and the recombination region is studied. A simple structure, WOLEDX CIEO 0.36, 0.38, with maximum current efficiency of 21.3 cdp / A, and an on-off voltage of 5.5 V. However, it is very difficult to optimize the efficiency and the switching on voltage simultaneously in the simple structure WOLED. We solve this problem by introducing Tmpypb, which reduces the starting voltage to 3.3 V, and the maximum current efficiency is 23.59 cdP / A CIEE 0.36 / 0.38 0.38. 2. Multilayer white light devices were fabricated. Using CBP and TCTA as the hole transport layer, the influence of the interface barrier of the hole transport layer / luminous layer on the carrier transport is discussed. The blue light host Tmpypb is changed to TCTA.The influence of carrier transport property of luminescent host on the recombination region and the interaction between luminescent layers are studied. Finally, the multilayer WO Ds with the structure of Moo _ 3N _ 3N ~ (5) N ~ (mb) / T _ CCTA-5nm ~ + / CBP ~ (Irn) MPCPPZN ~ (36) 10 nm ~ (-1) TCTA: first ~ (10) nm ~ (8) Tmpypbb ~ (35) NM / C ~ (2) CO _ (3) ~ (2) N ~ (m) Aln ~ (12) NM) have been optimized. The maximum current efficiency of the device can reach 25.25 cdAn / r CIE0.32 ~ (0.33), and the starting voltage is 3.5 V. ~ (3) N ~ (-1). The maximum current efficiency of the device can be up to 25.25 cm / r ~ (-1) ~ (?) = 0.32n / 0.33. A single luminous layer white light device was fabricated. By selecting CBP and TCTA with different three-line energy levels as the main materials, the single luminescent layer WOLED was prepared, and the single electron devices and emission absorption spectra were analyzed. The effects of energy transfer and carrier capture on the performance of single light-emitting layer (WOLED) are studied, and the hole-transfer layer material is changed by changing the hole-transfer layer material. The effect of the relationship between the main material and the hole transport layer on the single light-emitting layer WOLED is discussed. The single layer WOLED with the structure of ITO / Moo _ 3 / 5 nm / CBP ~ (35) NM / CBP: first ~ (I) = PQ _ (x) DX ~ (2) ~ (2) Irn ~ (2) ~ (15) ~ (15) nmand ~ (35) nm ~ (-1) C _ (2CO _ 3N ~ (3), the maximum current efficiency is 38.81 cdA, and the switching voltage is 3.1 V ~ (CIE0.32) ~ (0.39).
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN383.1

【参考文献】