GaAs HEMT开关器件的大信号模型

发布时间：2018-06-20 15:42

本文选题：GaAs + HEMT　；参考：《半导体技术》2016年06期

【摘要】：为了更好地表征GaAs HEMT开关器件的特性,提出了一种基于经验公式的改进型大信号模型。基于0.25μm HEMT工艺制备不同栅指数和单指栅宽的GaAs HEMT开关器件,然后对这些器件进行直流I-V特性和多偏置S参数的测试。采用栅源电流模型、漏源电流模型和电容模型对测试曲线进行拟合,从而得到可定标的GaAs开关大信号模型。对模型的开态插损和关态隔离度进行小信号仿真,模型的仿真结果与测试结果吻合较好,验证了此模型有较高的精准度。通过大信号负载牵引测试验证了模型的有效性,此模型可用于GaAs HEMT开关器件的设计、开发及应用。
[Abstract]:In order to better characterize the characteristics of GaAs HEMT switching devices, an improved large signal model based on empirical formula is proposed. GaAs HEMT switch devices with different gate exponents and single finger gate widths are fabricated based on 0.25 渭 m HEMT process. The DC I-V characteristics and multi-bias S parameters of these devices are measured. The gate source current model, drain source current model and capacitance model are used to fit the test curve, and a scalable large signal model of GaAs switch is obtained. The small signal simulation of the open state insertion loss and the off state isolation of the model is carried out, and the simulation results are in good agreement with the test results, which verifies that the model has a high accuracy. The validity of the model is verified by large signal load traction test. The model can be used in the design, development and application of GaAs HEMT switch devices.
【作者单位】：中国电子科技集团公司第十三研究所;
【分类号】：TN386

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