基于晶体管电路的单粒子翻转效应的模拟与验证

发布时间：2018-06-20 16:14

本文选题：单粒子翻转效应 + SOI　；参考：《辽宁大学》2015年硕士论文

【摘要】：空间辐射环境中的带电粒子对太空中飞行的航天器的性能和寿命有着重要的影响。随着集成电路越来越广泛的应用,航天器中所携带的电子设备越来越容易受到空间带电粒子的干扰。这些干扰中由于单粒子翻转效应引起的故障变得越来越不可忽视,所以需要研究和评估。目前评估单粒子翻转效应的方法有空间实验、地面实验和模拟等,由于空间实验和地面实验的成本高周期长,模拟方法既方便又快捷,所以有必要对对单粒子翻转效应进行模拟研究。本文介绍了研究单粒子翻转效应的历史与现状,分析了单粒子翻转效应的机理,探讨了单粒子翻转效应的研究方向和方法。对所采用的仿真软件进行了简单介绍,并采用建模仿真的方法研究了硅体器件的单粒子翻转效应,确定了影响单粒子翻转效应的主要因素。仿真结果表明:工作电压越大器件的抗单粒子翻转性能越强;带电粒子的线性能量传递系数越大器件越容易发生翻转;重离子射入器件敏感区的有效路径越长器件越容易发生翻转等;利用ISE-TCAD软件,对SOI器件进行了建模仿真,并分析比较了基于硅体器件和SOI工艺器件在相同因素影响下的抗单电子翻转性能。仿真结果表明SOI工艺器件的抗单粒子翻转性能相比硅体器件有了极大的提升。
[Abstract]:Charged particles in space radiation environment have an important influence on the performance and lifetime of spacecraft flying in space. With the wide application of integrated circuits, electronic devices carried in spacecraft are more and more vulnerable to the interference of charged particles in space. The faults caused by single particle inversion in these disturbances are becoming more and more important, so it is necessary to study and evaluate them. At present, there are many methods to evaluate the effect of single particle inversion, such as space experiment, ground experiment and simulation, etc. Because the cost of space experiment and ground experiment is long, the simulation method is convenient and fast. So it is necessary to simulate the single-particle reversal effect. In this paper, the history and present situation of single particle flip effect are introduced, the mechanism of single particle flip effect is analyzed, and the research direction and method of single particle flip effect are discussed. The simulation software is introduced briefly, and the single-particle flip effect of silicon device is studied by modeling and simulation, and the main factors affecting the single-particle flip effect are determined. The simulation results show that the higher the working voltage, the stronger the anti-single particle flip performance, and the more the linear energy transfer coefficient of charged particles is, the easier it is to flip the device. The longer the effective path of heavy ion injection into the sensitive region of the device, the easier it is to flip the device, etc. By using ISE-TCAD software, the SOI device is modeled and simulated. The anti-single-electron flip performance of silicon based devices and SOI process devices under the same influence factors was analyzed and compared. The simulation results show that the performance of SOI process is much better than that of silicon device.
【学位授予单位】：辽宁大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：V416;TN32

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