压接型IGBT器件单芯片子模组功率循环试验仿真

发布时间：2018-06-22 08:28

本文选题：压接型绝缘栅双极型晶体管(IGBT) + 单芯片子模组　；参考：《半导体技术》2017年10期

【摘要】：压接型绝缘栅双极型晶体管(IGBT)器件因具有双面散热、短路失效和易于串联等优点,正逐步应用到柔性直流输电等领域。但其在工作过程中的热学、力学特性与传统焊接式IGBT模块相比有很大差异,故存在不同的长期可靠性问题。基于有限元法建立了压接型IGBT器件单芯片子模组多物理场耦合仿真模型,研究了三种功率循环仿真条件下器件的热学和力学特性,并且在功率循环过程中利用金属弹塑性模型来模拟材料的瞬态特性。仿真结果表明,IGBT芯片发射极表面与发射极钼片相接触的边缘是应力集中区域,芯片发射极表面栅极缺口和四周边角处有明显的塑性变形。同时,将仿真结果与实际失效的IGBT芯片进行了对比,进一步验证了仿真模型的有效性和适用性。
[Abstract]:Voltage-connected insulated gate bipolar transistor (IGBT) devices are gradually applied to flexible direct current transmission due to their advantages of double-sided heat dissipation, short-circuit failure and ease of series. However, the thermal and mechanical properties of IGBT in the working process are different from those of the traditional IGBT module, so there are different long-term reliability problems. Based on the finite element method (FEM), the simulation model of multi-physical field coupling for single-chip submodules of IGBT devices is established, and the thermal and mechanical properties of the devices under three kinds of power cycle simulation conditions are studied. Metal elastoplastic model is used to simulate the transient characteristics of the material during the power cycle. The simulation results show that the edge of contact between the emitter surface of IGBT chip and the emitter molybdenum wafer is a stress concentration area, and there is obvious plastic deformation at the gate gap and around the edge corner of the emitter surface of the chip. At the same time, the simulation results are compared with the actual failure IGBT chip, which further verifies the validity and applicability of the simulation model.
【作者单位】：华北电力大学新能源电力系统国家重点实验室;国家电网全球能源互联网研究院;
【基金】：国家电网公司科技项目(5455GB160006)
【分类号】：TN322.8

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