非晶In-Ga-Zn-O肖特基二极管性能的研究

发布时间：2018-06-23 10:07

  本文选题：IGZO + 射频磁控溅射　； 参考：《山东大学》2015年硕士论文

【摘要】：相比于PN结二极管,由多数载流子导通的肖特基二极管具有响应速率快,正向导通压降低等优点,在直流、微波领域得到广泛应用。近年来,以非晶In-Ga-Zn-O (a-IGZO)为代表的非晶氧化物半导体由于其高电子迁移率(10cm2/Vs)、可大面积均匀成膜、制备温度低、可见光透明、柔性等优点引起了人们广泛重视。本文将针对IGZO基肖特基二极管的性能进行了系统化的研究。论文由以下三个部分组成：(1)简单明了地解释了肖特基二极管的工作原理,列出了二极管中存在的电荷传输过程,阐述了结电容和结击穿两个方面。列出了处理实验数据的基本公式,通过公式推导实验中各个参数。(2)介绍了整个实验工艺及设备,并指出了应用这些设备过程中应注意的事项。(3)详细地介绍了本论文的实验成果：尽管近年来IGZO基薄膜晶体管得到了广泛的研究,而相对于此种材料的肖特基二极管的研究却非常少,尽管二极管是大部分集成电路和微波前段整流器方面关键组成部分。这里我们用射频磁控溅射法在室温下制备了IGZO基肖特基二极管,对二极管不同阳极金属、不同溅射功率、不同氧浓度、不同IGZO薄膜厚度等方面进行了系统的研究,同时研究了这些条件下二极管的击穿电压特性。实验发现,高功函数金属Pd与其他金属相比由于其表面易被氧化更易形成具有良好性能的肖特基二极管。在溅射过程中,极高的射频功率和氧浓度都会导致Pd-IGZO接触界面质量下降,从而降低了二极管性能。在低功率(≤70W)和低的氧浓度(2.5%-5%)情况下制备的高性能肖特基二极管得到了高的整流率1.25×105,低的理想因子1.14,以及高的势垒高度0.73 eV。不同IGZO薄膜厚度情况下,200nm-IGZO肖特基二极管具有高的击穿电压-15 V。整个实验过程都是在室温下完成,说明完全可能在柔性衬底上制备高性能的肖特基二极管。
[Abstract]:Compared with PN junction diodes, Schottky diodes with majority carrier conduction have the advantages of fast response rate and low forward on-voltage drop, so they are widely used in the field of direct current and microwave. In recent years, amorphous oxide semiconductors, represented by amorphous In-Ga-Zn-O (a-IGZO), have attracted much attention because of their high electron mobility (10cm ~ 2 / Vs), large area homogeneous film formation, low temperature, transparent visible light, flexibility and so on. The performance of IGZO Schottky diode is systematically studied in this paper. The thesis consists of the following three parts: (1) the working principle of Schottky diode is explained simply and clearly, the charge transfer process in the diode is listed, and the two aspects of closing capacitance and junction breakdown are expounded. The basic formulas for dealing with experimental data are listed, and the parameters in the experiment are deduced by formula. (2) the whole experiment process and equipment are introduced. It also points out the matters needing attention in the application of these devices. (3) the experimental results of this paper are introduced in detail: although IGZO based thin film transistors have been extensively studied in recent years, There is little research on Schottky diodes relative to this material, although diodes are a key component of most integrated circuits and microwave front rectifiers. In this paper, IGZO Schottky diodes are fabricated by RF magnetron sputtering at room temperature. Different anode metals, different sputtering power, different oxygen concentration and different thickness of IGZO thin films are systematically studied. At the same time, the breakdown voltage characteristics of the diodes under these conditions are studied. It is found that compared with other metals, PD with high power function is more easily oxidized to form Schottky diodes with good performance. During the sputtering process, the high RF power and oxygen concentration will lead to the degradation of Pd-IGZO contact interface quality, thus reducing the performance of the diode. The high performance Schottky diodes with low power (鈮，

本文编号：2056762