智能剥离制备GOI材料

发布时间：2018-06-25 01:46

  本文选题：晶片键合 + 智能剥离　； 参考：《南京大学学报(自然科学)》2017年03期

【摘要】：绝缘体上锗(Germanium-on-Insulator,GOI)结合了Ge材料及SOI(Silicon-on-Insulator)结构的优点,是一种极具吸引力的Si基新型材料.GOI材料不仅具有高的电子和空穴迁移率,同时其独特的全介质隔离结构可以避免短沟道效应,降低寄生电容和结漏电流.首先研究不同表面处理方法对体Ge与SiO2/Si晶片键合强度的影响,实验结果显示采用N2等离子体活化处理结合氨水溶液(NH4OH∶H2O=1∶10)亲水性处理,所得到的体Ge与SiO2/Si晶片的键合效果较好,其键合强度3.8 MPa.利用智能剥离技术(Smart-Cut TM)制备了绝缘体上锗材料.SEM测试显示GOI材料键合质量良好,界面清晰平整,并且Ge层大部分面积无空洞.实验分析得到GOI材料的压应力及XRD(004)摇摆曲线中Ge峰的不对称是由GOI表面的注氢损伤层引起的.真空500℃退火30min对于注入损伤层的应力具有释放作用,但无法修复注入损伤.用溶液(NH4OH∶H2O2∶H2O=1∶1∶10)腐蚀去除注入损伤层后,应力层被去除,并且获得Ge峰半高宽仅为70.4arc sec的GOI材料.
[Abstract]:Germanium-on-Insulator (GOI), which combines the advantages of GE and SOI (Silicon-on-Insulator), is an attractive Si-based material. GOI not only has high electron and hole mobility, but also can avoid short channel effect. Reduce parasitic capacitance and leakage current. The effect of different surface treatment methods on bonding strength between GE and Sio _ 2 / Si wafer was studied. The experimental results showed that N _ 2 plasma activation combined with NH _ 4o _ H _ 2O: 1: 10 (NH _ 4o _ H _ 2O: 1: 10) was used. The bonding effect of the bulk GE and Sio _ 2 / Si wafer is good, and the bonding strength is 3.8 MPA. The germanium material on insulator prepared by smart stripping technique (Smart-Cut TM). SEM test shows that the bonding quality of GOI material is good, the interface is clear and smooth, and there is no cavity in most GE layer area. The experimental results show that the pressure stress of GOI and the asymmetry of GE peak in XRD (004) rocking curve are caused by the damage layer on GOI surface by hydrogen injection. Vacuum annealed at 500 鈩，

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