新型电调薄膜体声波谐振器（FBAR）研究

发布时间：2018-06-27 05:28

本文选题：薄膜体声波谐振器(FBAR) + 频率调谐　；参考：《浙江大学》2015年硕士论文

【摘要】：随着微电子产业的不断发展,特别是可穿戴设备的兴起,市场对电子元器件的要求越来越严苛。薄膜体声波谐振器(FBAR)作为一种高频器件,拥有很小的体积以及极高的品质因数,已逐渐被应用于无线收发电路。同时,基于FBAR器件的各类传感器通常具有很高的灵敏度,受到了国内外研究人员的关注。可以预见,在未来微电子产品中,FBAR必将发挥更大的作用。本文基于实验室超净间微纳加工平台,研究制备了高性能的FBAR器件。同时,从市场应用需求出发,提出了一种新型的电调FBAR结构,并基于该结构,提出了多种新型的实际应用方案。具体的研究内容和成果如下： 1、获得了成熟稳定的背刻蚀FBAR制备工艺。依托实验室MEMS工艺环境,成功制备出了谐振频率在1-3GHz的背刻蚀型FBAR器件。经测试制得的器件Q值普遍在500以上,最好的器件Q值高达2068。 2、研究了FBAR的本征电调特性及其机理。对于工作频率约为1.5GHz的FBAR,测试得到直流偏压会引起15kHz/V或30kHz/V的频率偏移,据此推出了直流偏压对ZnO弹性系数的影响为+0.03%@+10V,并从压电系数角度分析了出现上述两种结果的原因,验证了FBAR的本征电调机理。 3、提出了新型的电调FBAR器件。通过在FBAR压电层和电极之间引入了一层半导体ZnO薄层,创造性的将肖特基势垒二极管和FBAR压电振荡堆结合在一起,极大的提升了FBAR的电调能力。通过制备与测试,得到了调谐范围达200kHz/V的电调FBAR器件,远大于FBAR的本征电调结果。同时,提出了新型电调FBAR的等效模型,该模型与测试结果吻合的很好,为进一步研究提供了理论工具。 4、提出了新型电调FBAR的多种应用。包括(1)基于它的紫外光(UV)传感器,在1mW/cm2光强下,频率响应为140kHz,而传统FBAR在同样光强下,仅有40kHz的频率响应,灵敏度有了很大的提升。(2)基于其电调能力提出了一种可以单芯片集成的温度补偿和频率自校准方案,实现了FBAR的性能优化。(3)本文还提出了一种可以实现全频段调谐的电调FBAR滤波器阵列结构。这些应用都具有很大的市场前景。
[Abstract]:With the development of microelectronics industry, especially the rise of wearable devices, the market demands more and more stringent electronic components. Thin film bulk acoustic resonator (FBAR), as a kind of high frequency device, has been used in wireless transceiver because of its small volume and high quality factor. At the same time, all kinds of sensors based on FBAR devices usually have high sensitivity, which has attracted the attention of researchers at home and abroad. It can be predicted that FBAR will play a greater role in the future microelectronics products. In this paper, high performance FBAR devices are fabricated on the platform of laboratory super-clean micro-nano fabrication. At the same time, according to the market application requirements, a new type of electric tuning FBAR structure is proposed, and based on this structure, several new practical application schemes are proposed. The specific research contents and results are as follows: 1. A mature and stable preparation process of back etching FBAR has been obtained. Based on the laboratory MEMS process environment, a backetching FBAR device with resonant frequency of 1-3 GHz was successfully fabricated. The Q-value of FBAR is generally above 500, and the best is 2068.2. The intrinsic electromodulation characteristics and its mechanism of FBAR are studied. For FBARs whose operating frequency is about 1.5GHz, the frequency offset of 15kHz / V or 30kHz / V is obtained by measuring DC bias voltage. According to this, the effect of DC bias voltage on the elastic coefficient of ZnO is 0.03 @ 10V, and the reasons for the above two results are analyzed from the angle of piezoelectric coefficient. The intrinsic electromodulation mechanism of FBAR is verified. 3. A new type of FBAR device is proposed. By introducing a thin layer of semiconductor ZnO between the piezoelectric layer of FBAR and the electrode, the Schottky barrier diode and the FBAR piezoelectric oscillator stack are creatively combined, which greatly improves the electric tuning ability of FBAR. The tunable FBAR device with a tuning range of 200 kHz / V is obtained, which is much larger than the intrinsic tuning result of FBAR. At the same time, the equivalent model of the new electric regulation FBAR is put forward, which is in good agreement with the test results, which provides a theoretical tool for further research. 4. Several applications of the new electric regulation FBAR are proposed. Including (1) the UV sensor based on it, with a frequency response of 140 kHz at 1 MW / cm2 light intensity, whereas the conventional FBAR has a frequency response of only 40 kHz at the same light intensity. The sensitivity has been greatly improved. (2) based on its electromodulation capability, a single-chip temperature compensation and frequency self-calibration scheme is proposed. The performance of FBAR is optimized. (3) this paper also proposes an array structure of electrically tuned FBAR filter which can be tuned in full frequency band. These applications have great market prospects.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN629.1

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