利用CBD法进行氧化锌掺杂半导体纳米阵列的制备及特性研究

发布时间：2018-06-28 15:44

本文选题：椭圆偏振仪 + 半导体　；参考：《浙江工业大学》2015年硕士论文

【摘要】：氧化锌的特性在很大程度上取决于微观尺寸和形貌,除了单一的薄膜结构,其他复杂的结构也已经被广泛研究。氧化锌材料中掺入不同的元素能改变其光学、磁学、电学等特性。掺锡能制得三元半导体Zn2SnO4,但是目前为止还没有关于掺锡氧化锌纳米阵列的报道。在CdTe太阳能电池中,利用磁控溅射法制得的Zn2SnO4可以作为缓冲层来提高太阳能电池窗口层的光学透过率和短路电流。我们希望用水热法(CBD)合成ZNAs:Sn来代替现有的磁控溅射制备的Zn2SnO4薄膜,作为碲化镉太阳能电池中的缓冲层。通过适当的理论模拟来指导实验,调整适合的阵列密度以及纳米棒直径来提高缓冲层的透过率,提高太阳能电池的外量子效率。另外探索Sn的最佳掺杂,同时生成纳米阵列,使缓冲层的能隙蓝移,让更多的光子进入PN结中。本论文利用水热法在旋涂法制成的种子层基底上生长氧化锌纳米阵列(ZNAs)和掺锡氧化锌纳米阵列(ZNAs:Sn)。为了研究掺锡对氧化锌纳米阵列透光性的影响,我们用X射线衍射(XRD)、扫描电镜(SEM)、透射谱和椭圆偏振仪(SE)对样品进行了表征,并结合等效介质模型(EMA)理论模拟样品光学常数,根据太阳能光谱AM1.5计算透过光的总功率。XRD分析表明纳米棒垂直于基底沿(002)晶向生长,SEM和椭圆偏振仪表明样品表面形貌良好,制得的纳米棒直径约300nm,长度约1.6μm。透射谱表明ZNAs掺锡之后,在300-800nm波段透过率增大。根据AM1.5计算获得在样品厚度相同的情况下,掺杂5%的ZNAs:Sn透过光总功率是不掺杂纳米阵列ZNAs的1.6倍。
[Abstract]:The properties of ZnO depend on the microstructure and morphology to a great extent. In addition to the single thin film structure, other complex structures have been widely studied. The optical, magnetic and electrical properties of zinc oxide materials can be changed by adding different elements. The ternary semiconductor Zn _ 2SnO _ 4 can be prepared by doping tin, but there are no reports of tin doped zinc oxide nanoarrays. In CdTe solar cells, Zn2SnO4 prepared by magnetron sputtering can be used as a buffer layer to improve the optical transmittance and short-circuit current of the solar cell window layer. We hope that ZNAs: Sn can be synthesized by hydrothermal method (CBD) instead of Zn _ 2SnO _ 4 thin films prepared by magnetron sputtering, as a buffer layer in cadmium telluride solar cells. Through proper theoretical simulation to guide the experiment, adjust the appropriate array density and the diameter of nanorods to improve the transmittance of buffer layer and improve the external quantum efficiency of solar cells. In addition, the best doping of Sn is explored, and nanoscale arrays are formed, which make the energy gap of buffer layer blue shift and allow more photons to enter into PN junction. In this paper, zinc oxide nanoarrays (ZNAs) and tin doped zinc oxide nanoarrays (ZNas: Sn) were grown on spin-coated seed substrate by hydrothermal method. In order to study the effect of tin doping on the transmittance of ZnO nanoarrays, the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectrum and ellipsometry (SE). The optical constants of the samples were simulated by the equivalent medium model (EMA). According to the total power of light transmission calculated by the solar spectrum AM1.5, XRD analysis shows that the nanorods are perpendicular to the substrate along the (002) crystal direction and the surface morphology of the samples is good. The diameter of the nanorods is about 300 nm and the length is about 1.6 渭 m. The transmission spectra show that the transmittance of ZNAs increases in the 300-800nm band after tin doping. According to the calculation of AM1.5, the total optical power of ZNas: Sn doped with 5% is 1.6 times as much as that of ZNAs without doping nanoscale arrays under the condition of the same thickness of the samples.
【学位授予单位】：浙江工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.21

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