基于氢化物气相外延法氮化镓在石墨烯上的生长机理研究与表征

发布时间：2018-07-03 09:17

本文选题：石墨烯 + 氮化镓　；参考：《苏州大学》2015年硕士论文

【摘要】：石墨烯自2004年发现以来,受到越来越多的关注和研究。氮化镓作为第三代半导体的代表材料,以其优异的电光学特性得到广泛的应用。本论文主要研究石墨烯的生长以及利用氢化物气相外延方法(Hydride Vapor Phase Epitaxy,HVPE)在石墨烯衬底上氮化镓薄膜的进一步生长。论文采用电子显微镜、X射线衍射、拉曼光谱等手段表征了石墨烯和氮化镓薄膜的形貌以及氮化镓材料中的位错,采用优化的参数得到了低缺陷密度(108cm-2数量级)的氮化镓薄膜。论文主要分为如下几个章节进行讨论:第一章:介绍了课题的背景,回顾和总结了石墨烯的发现以及石墨烯的基本结构性质和制备方法,简单介绍了氮化镓的晶体结构以及生长方法和位错类型,并介绍了目前石墨烯上生长氮化镓薄膜的进展。由此确定了本论文的工作安排。第二章:介绍了用于表征石墨烯和石墨烯上生长氮化镓的主要技术手段方法以及仪器,包括:光学显微镜(Optical Microscope,OM),扫描电子显微镜(Scanning Electron Microscope,SEM),透射电子显微镜(Transmission Electron Microscope,TEM),拉曼光谱(Raman Spectrum,RS),原子力显微镜(Atom Force Microscope,AFM)以及X射线衍射(X-ray Diffraction,XRD)。第三章:利用CVD方法生长石墨烯,并且进一步利用HVPE在石墨烯上生长氮化镓,介绍了几种不同的转移石墨烯的方法。利用分析测试手段对石墨烯和氮化镓进行了分析表征,表征了氮化镓的表面形貌以及晶体质量,CL和XRD的结果都显示位错密度在108数量级。同时,利用拉曼光谱线扫在样品横截面探测石墨烯的特征信号,证明了石墨烯的存在。第四章:研究了氮化镓中位错的类型与分布,与衬底中位错进行了对比分析。讨论了石墨烯对其上氮化镓的生长行为的影响,并分析了石墨烯对于氮化镓材料中应力的影响。
[Abstract]:Graphene has attracted more and more attention since it was discovered in 2004. As the representative material of the third generation semiconductor, gallium nitride has been widely used for its excellent electro-optical properties. In this paper, the growth of graphene and the further growth of gallium nitride thin films on graphene substrates by Hydride Vapor Phase Epitaxy HVPE (Hydride Vapor Phase Epitaxy HVPE) are studied. The morphologies of graphene and gallium nitride thin films and the dislocations in gallium nitride materials were characterized by means of electron microscope X-ray diffraction and Raman spectroscopy. The low defect density (108cm-2 order of magnitude) was obtained by optimizing the parameters. The thesis is divided into the following chapters: chapter 1: the background of the subject is introduced, the discovery of graphene, the basic structure properties and preparation methods of graphene are reviewed and summarized. The crystal structure, growth methods and dislocation types of gallium nitride are briefly introduced. The progress of gallium nitride thin films on graphene is also introduced. Therefore, the work organization of this paper is determined. Chapter 2: the main technical methods and instruments used to characterize the growth of gallium nitride on graphene and graphene are introduced. It includes optical microscope (OM), scanning electron microscope (SEM), transmission electron microscope (TEM), Raman spectroscopy (Raman spectrum), Atom force microscope (AFM) and X-ray diffraction (XRD). In chapter 3, graphene was grown by CVD and gallium nitride was grown on graphene by HVPE. Several different methods of transferring graphene were introduced. Graphene and gallium nitride were characterized by means of analysis and measurement. The surface morphology of gallium nitride and the results of crystal quality CL and XRD showed that the dislocation density was in the order of 108. At the same time, the existence of graphene was proved by the characteristic signal of graphene detected by Raman scanning at the cross section of the sample. Chapter 4: the type and distribution of dislocations in gallium nitride are studied and compared with those in substrates. The effect of graphene on the growth behavior of gallium nitride was discussed, and the effect of graphene on the stress of gallium nitride was analyzed.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.054

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