无线通信系统的SOI CMOS功率放大器研究与设计

发布时间：2018-07-04 23:23

本文选题：功率放大器 + 无线通信系统　；参考：《上海交通大学》2015年硕士论文

【摘要】：随着近年来无线通信系统的不断发展,人们对于无线通信设备的需求越来越大,对于其性能要求也越来越高。无线通信系统,例如无线局域网(WLAN)、手机等等,已经进入到了我们生活中的方方面面。功率放大器作为无线收发系统中能量消耗最大的环节,在很大程度上影响着整个系统的性能好坏。目前的功率放大器较多的都是采用化合物半导体工艺制造的,导致其很难与其它基于CMOS工艺的模块集成在同一块芯片上。这就为我们使用CMOS工艺设计功率放大器带来了极大的动力。SOI CMOS工艺与传统的BULK CMOS工艺相比,在功率放大器的设计中,有着很多的优点,例如更小的寄生参数,更好的隔绝度以及方便的版图绘制等等。此次设计中,我们将使用IBM 0.18μm SOI CMOS工艺来完成设计与仿真。本文首先介绍了功率放大器的背景知识,包括功率放大器的性能指标、分类以及提升性能的方法。然后介绍此次设计中使用的SOI CMOS工艺,以及其与传统BULK CMOS工艺的优势。最后详细介绍兼顾效率和线形度的AB类功率放大器与强调效率的F类功率放大器的设计与仿真过程。
[Abstract]:With the development of wireless communication system in recent years, the demand for wireless communication equipment is increasing, and the demand for its performance is becoming higher and higher. Wireless communication systems, such as wireless local area networks (WLAN), mobile phones and so on, have entered every aspect of our life. As the most energy-consuming link in wireless transceiver system, power amplifier affects the performance of the whole system to a great extent. At present, most power amplifiers are fabricated by compound semiconductor process, which makes it difficult to integrate with other CMOS process modules on the same chip. This brings us great power to design power amplifiers using CMOS process. Compared with traditional bulk CMOS process, SOI CMOS process has many advantages in power amplifier design, such as smaller parasitic parameters. Better isolation and convenient layout drawing and so on. In this design, we will use IBM 0.18 渭 m SOI CMOS process to complete the design and simulation. In this paper, the background of power amplifier is introduced, including performance index, classification and method of improving performance. Then the SOI CMOS process used in this design and its advantages over the traditional bulk CMOS process are introduced. In the end, the design and simulation of class AB power amplifier and F type power amplifier with both efficiency and linearity are introduced in detail.
【学位授予单位】：上海交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75

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