基于关断电流最大变化率的压接式IGBT模块结温提取方法

发布时间：2018-07-05 10:28

本文选题：压接式IGBT + 可靠性　；参考：《电工技术学报》2017年12期

【摘要】：压接式绝缘栅极双极性晶体管(IGBT)模块因优越的电气性能和封装设计,受到柔性直流输电等大功率应用场合的青睐,其模块可靠性也成为大功率应用场合研究的重点,而IGBT模块结温是影响器件可靠性的重要因素。基于压接式IGBT模块双脉冲测试平台,介绍一种基于关断电流最大变化率的压接式IGBT模块结温提取方法,分析压接式IGBT芯片结温和模块关断电流最大变化率间单调变化关系,并利用压接式IGBT模块封装结构固有的寄生电感有效获取关断电流最大变化率的信息,以此来反推模块结温特性。最后通过压接式IGBT双脉冲测试平台验证了通过模块关断电流最大变化率进行压接式IGBT结温提取的可行性。
[Abstract]:Voltage insulated gate bipolar transistor (IGBT) module is favored in high power applications such as flexible direct current transmission due to its superior electrical performance and packaging design. The reliability of IGBT module has also become the focus of research in high-power applications. IGBT module junction temperature is an important factor affecting the device reliability. Based on the double pulse test platform of IGBT module, this paper introduces a method of extracting the junction temperature of IGBT module based on the maximum change rate of turn-off current, and analyzes the monotonic variation relationship between the maximum change rate of switch current of IGBT chip junction and module. The parasitic inductance inherent in the encapsulation structure of the IGBT module is used to obtain the information of the maximum change rate of the turn-off current effectively, so as to push back the junction temperature characteristics of the module. Finally, the feasibility of extracting IGBT junction temperature by using the maximum change rate of switch off current of the module is verified by using the IGBT double pulse test platform.
【作者单位】：浙江大学电气工程学院;
【基金】：国家自然科学基金资助项目(51490682)
【分类号】：TN322.8

【参考文献】