有机薄膜晶体管中杂化绝缘层的研究

发布时间：2018-07-05 19:56

本文选题：有机薄膜晶体管 + 杂化绝缘层　；参考：《燕山大学》2015年硕士论文

【摘要】：有机薄膜晶体管因具有制备工艺简单、成本低廉、柔韧性好等优点,被广泛应用于显示、传感器、集成电路等领域。其中,绝缘层的表面特性可以影响在它上面生长的半导体层的结晶质量,所以对整个器件的性能有至关重要的影响。本文制备出了一种有机"无机杂化绝缘薄膜,旨在结合无机材料的高介电常数与有机材料的低表面粗糙度,优化器件性能。具体研究内容如下:首先,介绍有机薄膜晶体管的应用领域、研究现状以及目前存在的问题,并详细阐述其工作原理和基本结构,在此基础上介绍有机薄膜晶体管的一些性能指标和材料的选取。分析有机薄膜晶体管所用到的制备工艺,并阐述本文中器件的制备过程,对器件的测量仪器及其原理进行说明。其次,对酞菁铜有机薄膜晶体管的有机绝缘层作用进行深入研究。应用PMMA修饰Si O2和PVA,制备的双绝缘层器件的输出电流和迁移率比单层器件得到提高。之后研究新型聚合物材料P(MMA-GMA)作为绝缘层的效果,对绝缘薄膜的厚度进行有效减薄后,得到的器件性能明显提升。再次,对比制备基于PVA/P(MMA-GMA)双绝缘层与P(MMA-GMA)单绝缘层器件,双层器件阈值电压由-5V改善到-3V,迁移率由5.24×10-3cm2/Vs提高到1.15×10-2cm2/Vs,并对器件性能改善原因进行分析。最后,研究基于Al2O3/P(MMA-GMA)杂化绝缘层制备的酞菁铜有机薄膜晶体管。确定磁控溅射法制备Al2O3薄膜的工艺参数,用原子力显微镜及X射线衍射仪分析薄膜的生长情况。
[Abstract]:Organic thin film transistors are widely used in display, sensor, integrated circuit and other fields because of their advantages of simple preparation, low cost, good flexibility and so on. The surface characteristics of the insulating layer can affect the crystallization quality of the semiconductor layer grown on it, so it has a crucial effect on the performance of the whole device. In this paper, an organic "inorganic hybrid insulating film" was prepared to optimize the device performance by combining the high dielectric constant of the inorganic material with the low surface roughness of the organic material. The specific research contents are as follows: firstly, the application field of organic thin film transistors, the present research situation and the existing problems are introduced, and the working principle and basic structure of the organic thin film transistors are described in detail. On this basis, some performance indexes and material selection of organic thin film transistors are introduced. The fabrication process of organic thin film transistors is analyzed, and the fabrication process of the devices in this paper is described. The measuring instruments and their principles are explained. Secondly, the function of organic insulating layer of copper phthalocyanine organic thin film transistor is studied. PMMA modified Sio _ 2 and PVA are used to improve the output current and mobility of the double-layer devices compared with single-layer devices. The effect of new polymer material P (MMA-GMA) as the insulating layer is studied. After the thickness of the insulating film is reduced effectively, the performance of the device is improved obviously. Thirdly, based on PVA / P (MMA-GMA) double insulation layer and P (MMA-GMA) single insulating layer device, the threshold voltage of double layer device is improved from -5V to -3V, and the mobility is increased from 5.24 脳 10 ~ (-3) cm ~ (-2) / Vs to 1.15 脳 10 ~ (-2) cm ~ (-2) / V _ s. Finally, the copper phthalocyanine organic thin film transistors based on Al _ 2O _ 3 / P (MMA-GMA) hybrid insulator are studied. The technological parameters of preparing Al _ 2O _ 3 thin films by magnetron sputtering were determined. The growth of Al _ 2O _ 3 thin films was analyzed by atomic force microscope and X-ray diffractometer.
【学位授予单位】：燕山大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN321.5

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