150A传输线脉冲发生器(TLP)的研究
本文选题:VDMOS + 传输线脉冲发生器 ; 参考:《华北电力大学(北京)》2017年硕士论文
【摘要】:作为功率开关,VDMOS器件以其高开关速度、高耐压、低导通电阻、宽安全工作区以及很好的热稳定性等特点,在电力电子的应用中占有举足轻重的作用,然而问题是功率VDMOS器件其特殊的内部结构,静电或相关的电压瞬变等外部环境可能会形成闩锁效应(latch-up),导致电路失效,甚至烧毁芯片。大量研究工作表明,功率集成电路的现场失效很多都表现为闩锁效应引起的过电应力失效,这严重妨碍了我国民用、军用电子设备可靠性的提高。目前功率器件电学闩锁效应的研究工作一直难以开展,其根本原因在于测试手段的缺乏。150A传输线脉冲发生器(150A Transmission Line Pulse,150A TLP)是一种间接测试功率器件电学闩锁效应的新的研究方向,可以在高压失效前产生更少的热量,实现“冷触发”,进而测试VDMOS等功率器件承受脉冲时的最大关态击穿闩锁触发电流等参数,判断器件抗闩锁特性防护技术的有效性,节约了器件研制成本,针对上述问题开展了对150A传输线脉冲发生器的研究开发工作,具体如下:(1)深入研究了TLP测试系统和150A TLP测试系统机制和特点,提出了150A TLP的硬件实现方法,开发了低阻抗传输线,提升了终端极化器、继电器等的耐压值,为解决系统过冲或振荡问题,开发了先进的大功率滤波结构,利用继电器的二级驱动模式,实现了150A TLP自动化测试系统;(2)使用搭建的150A TLP测试系统,完成了对系统高压源开关时间的探测以及充电电压的校准,得出了系统输出波形,验证了系统各项参数是否达到预期指标,为后续程序控制创造有利条件;(3)根据测试系统个性化定制软件需求分析,设计了系统功能模块以及实现流程图,借助于图形化编程软件LabVIEW分别完成了对底层驱动、中层功能以及高层用户界面程序的编写与设计工作,实现了150A TLP测试系统的自动化运行;(4)通过150A TLP自动化测试系统应用实验,表明该系统运行稳定,测试误差小,可以精确测试出器件闩锁电流,评估器件抗闩锁性能的优劣,通过高可靠芯片抗闩锁能力筛选测试,有效衡量出不同产品的抗闩锁能力,同时利用150A TLP还可以测试不同栅压对功率器件性能的影响,为超快大功率VDMOS器件可靠性测试提供了检测手段,保障了大功率器件抗闩锁性能的进一步研究。
[Abstract]:As a power switch VDMOS device, with its high switching speed, high voltage, low on-resistance, wide safe working area and good thermal stability, it plays an important role in the application of power electronics. However, the problem is that the special internal structure of power VDMOS devices, electrostatic or related voltage transients and other external environment may form a latch effect (latch-up), resulting in circuit failure, or even destroyed the chip. A large number of researches show that many of the field failures of power integrated circuits are caused by the latch effect, which seriously hinders the improvement of the reliability of civil and military electronic equipment in China. At present, the research work on the electrical latch effect of power devices has been difficult to carry out. The fundamental reason lies in the lack of testing means. 150A Transmission Line Pulse Generator (150A Transmission Line Pulsetrain 150A TLP) is a new research direction for indirectly testing the electrical latch effect of power devices. It can produce less heat before high-voltage failure, realize "cold trigger", and then test the parameters such as maximum on-off latch trigger current when VDMOS and other power devices are subjected to pulse, and judge the effectiveness of the anti-latch characteristic protection technology of the device. The research and development work of 150A transmission line pulse generator is carried out in view of the above problems. The main contents are as follows: (1) the mechanism and characteristics of TLP test system and 150A TLP test system are deeply studied. The hardware realization method of 150A TLP is presented, the low impedance transmission line is developed, the voltage value of the terminal polarizer and relay is raised, and the advanced high power filter structure is developed to solve the problem of overshoot or oscillation of the system. The 150A TLP automatic test system is realized by using the two-stage driving mode of the relay. (2) the 150 A TLP test system is used to detect the switching time of the high voltage source of the system and calibrate the charging voltage, and the output waveform of the system is obtained. It verifies whether the parameters of the system reach the expected targets and creates favorable conditions for the subsequent program control. (3) according to the requirement analysis of customized software of the test system, the function module and the flow chart of the system are designed. With the help of the graphical programming software LabVIEW, the programming and designing of the bottom driver, middle function and high-level user interface program are completed, and the automatic operation of the 150A TLP test system is realized. (4) the application experiment of the 150A TLP automatic test system is carried out. The results show that the system is stable in operation and small in error. It can accurately measure the latch current of the device, evaluate the advantages and disadvantages of the anti-latch performance of the device, and effectively measure the anti-latch ability of different products by screening and testing the anti-latch ability of the high reliability chip. At the same time, 150A TLP can also be used to test the influence of different gate voltages on the performance of power devices, which provides a means for reliability testing of ultra-fast and high-power VDMOS devices and ensures further research on the anti-latch performance of high-power devices.
【学位授予单位】:华北电力大学(北京)
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN782
【参考文献】
相关期刊论文 前7条
1 陈海明;;基尔霍夫定律在电路分析中的应用[J];科技资讯;2016年03期
2 罗尹虹;张凤祁;郭红霞;周辉;王燕萍;张科营;;纳米DDR SRAM器件重离子单粒子效应试验研究[J];强激光与粒子束;2013年10期
3 张晋新;郭红霞;文林;郭旗;崔江维;范雪;肖尧;席善斌;王信;邓伟;;锗硅异质结晶体管单粒子效应激光微束模拟[J];强激光与粒子束;2013年09期
4 张立荣;;高压VDMOS器件的研制及其抗辐照特性研究[J];电子与封装;2013年06期
5 范雪;李平;李威;杨志明;张斌;郭红霞;姚志斌;;~(252)Cf源和重离子加速器对FPGA的单粒子效应[J];强激光与粒子束;2011年08期
6 罗宏伟,师谦;集成电路抗ESD设计中的TLP测试技术[J];电子产品可靠性与环境试验;2003年04期
7 贺朝会,耿斌,杨海亮,陈晓华,张正选,李国政;半导体器件单粒子效应的加速器模拟实验[J];强激光与粒子束;2002年01期
相关会议论文 前1条
1 王小荷;黄玉文;耿增建;;VDMOS器件单粒子加固技术研究[A];第十届全国抗辐射电子学与电磁脉冲学术年会论文集[C];2009年
相关硕士学位论文 前2条
1 应杭;软件自动化测试技术及应用研究[D];浙江大学;2006年
2 刘宗玉;基于虚拟仪器的自动测试系统的研究[D];西北工业大学;2001年
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