GLSI多层铜布线CMP后清洗颗粒去除的研究
发布时间：2018-07-14 09:12
【摘要】：随着极大规模集成电路(GLSI)特征尺寸不断缩小,杂质对器件性能的影响日益严重,对清洗的要求也不断提高。目前,清洗已成为集成电路制造过程中最重要的工序之一。颗粒能形成针孔、小岛等缺陷,造成器件短路、断路,严重影响器件性能甚至导致器件失效,是主要清洗对象之一。因此,颗粒去除的研究对于GLSI多层铜布线化学机械抛光(CMP)后清洗技术的发展、清洗剂的研发、确保CMP工艺的成功有着重要的意义。本论文系统地分析了CMP后清洗在集成电路制造过程中的重要地位,讨论了主流清洗技术的优势与缺点,结合集成电路行业对清洗的要求探讨了清洗技术发展趋势;并对CMP后清洗中常见的SiO2颗粒缺陷的吸附和去除机理做了系统的研究。重点研究FA/O螯合剂和活性剂在控制颗粒吸附、改变颗粒吸附状态及去除颗粒等方面的作用。本论文通过改变抛光液组分及相关抛光工艺参数等方法,研究其对Si O2颗粒吸附的影响,结果表明抛光液中硅溶胶含量越高、氧化剂含量越高,CMP后晶圆表面吸附的SiO2颗粒越多;活性剂含量越高、转速越高,晶圆表面吸附的Si O2颗粒越少。通过实验验证分析了清洗剂主要成分FA/O II型螯合剂和FA/O I型活性剂对颗粒的去除作用:FA/O II型螯合剂和FA/O I型活性剂均对颗粒清洗有促进作用,浓度越高,颗粒的清洗效果越好;清洗剂配比优化结果表明,当FA/O II型螯合剂浓度为100ppm,FA/O I型活性剂浓度接近3000ppm时,SiO2颗粒得到有效去除,且晶圆表面缺陷总数为946,接近工业应用要求。
[Abstract]:As the size of the large scale integrated circuit (GLSI) is shrinking, the influence of impurities on the performance of the device is becoming more and more serious, and the requirements for cleaning are also increasing. At present, cleaning has become one of the most important processes in the manufacturing process of integrated circuits. Particles can form pinholes, small islands and other defects, resulting in short circuit and circuit breakage, which seriously affect the device character. It is one of the main cleaning objects that can even cause the failure of the device. Therefore, the research of particle removal is of great significance to the development of the cleaning technology after GLSI multi-layer copper wiring chemical mechanical polishing (CMP) and the research and development of the cleaning agent to ensure the success of the CMP process. This paper systematically analyzes the weight of the cleaning in the integrated circuit manufacturing process after the CMP cleaning. The advantages and disadvantages of the mainstream cleaning technology are discussed, and the development trend of cleaning technology is discussed in the light of the requirements of the integrated circuit industry for cleaning. The mechanism of the adsorption and removal of the common SiO2 particle defects in the CMP cleaning is systematically studied. The FA/O chelating agent and the active agent are mainly studied to control the particle adsorption and change the particle absorption. The effect on the adsorption of Si O2 particles is studied by changing the composition of the polishing liquid and the parameters of the polishing process. The results show that the higher the content of the silica sol is, the higher the content of the oxidizer, the more SiO2 particles adsorbed on the surface of the wafer after CMP, the higher the content of the activator, the more the active agent is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more speed the speed is. The less Si O2 particles adsorbed on the wafer surface, the less the particles were adsorbed on the wafer surface. Through the experiment, the removal effect of the main components FA/O II chelating agent and FA/O I active agent on the particles was analyzed. The FA/O II chelating agent and FA/O I type active agent all have the promotion effect on the particle cleaning, the higher the concentration, the better the cleaning effect of the particles; the optimization result of the cleaning agent ratio. It is shown that when the concentration of FA/O II chelating agent is 100ppm and the concentration of FA/O I type activator is close to 3000ppm, the SiO2 particles are effectively removed and the total number of defects on the wafer surface is 946, which is close to the requirements of industrial application.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN405.97
本文编号：2121175
[Abstract]:As the size of the large scale integrated circuit (GLSI) is shrinking, the influence of impurities on the performance of the device is becoming more and more serious, and the requirements for cleaning are also increasing. At present, cleaning has become one of the most important processes in the manufacturing process of integrated circuits. Particles can form pinholes, small islands and other defects, resulting in short circuit and circuit breakage, which seriously affect the device character. It is one of the main cleaning objects that can even cause the failure of the device. Therefore, the research of particle removal is of great significance to the development of the cleaning technology after GLSI multi-layer copper wiring chemical mechanical polishing (CMP) and the research and development of the cleaning agent to ensure the success of the CMP process. This paper systematically analyzes the weight of the cleaning in the integrated circuit manufacturing process after the CMP cleaning. The advantages and disadvantages of the mainstream cleaning technology are discussed, and the development trend of cleaning technology is discussed in the light of the requirements of the integrated circuit industry for cleaning. The mechanism of the adsorption and removal of the common SiO2 particle defects in the CMP cleaning is systematically studied. The FA/O chelating agent and the active agent are mainly studied to control the particle adsorption and change the particle absorption. The effect on the adsorption of Si O2 particles is studied by changing the composition of the polishing liquid and the parameters of the polishing process. The results show that the higher the content of the silica sol is, the higher the content of the oxidizer, the more SiO2 particles adsorbed on the surface of the wafer after CMP, the higher the content of the activator, the more the active agent is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more the speed is, the more speed the speed is. The less Si O2 particles adsorbed on the wafer surface, the less the particles were adsorbed on the wafer surface. Through the experiment, the removal effect of the main components FA/O II chelating agent and FA/O I active agent on the particles was analyzed. The FA/O II chelating agent and FA/O I type active agent all have the promotion effect on the particle cleaning, the higher the concentration, the better the cleaning effect of the particles; the optimization result of the cleaning agent ratio. It is shown that when the concentration of FA/O II chelating agent is 100ppm and the concentration of FA/O I type activator is close to 3000ppm, the SiO2 particles are effectively removed and the total number of defects on the wafer surface is 946, which is close to the requirements of industrial application.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN405.97
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