双DBR半导体激光器中DBR反射率对器件性能影响的研究
发布时间：2018-07-24 20:25
【摘要】：双波长半导体激光器具有效率高、结构紧凑等优点,在很多领域有重要的应用。本文设计了一种基于分布布拉格反射(DBR)半导体激光器的双波长半导体激光器,这种激光器由DBR光栅、相位区、增益区、Y型波导几个部分构成,设计波长为1064nm和1030nm,本文使用光束传播算法(BPM)模拟计算了DBR光栅在不同结构参数下的反射率特性,计算了其反射率峰值和半高宽的变化,探讨了矩形光栅结构的占空比、刻蚀深度与耦合系数的关系。最后模拟了1064nmDBR激光器的阈值特性以及光谱特性,并与实验结果相对比,进一步分析了DBR反射率对器件性能的影响,参考分析结果模拟设计了双波长半导体激光器,分析了DBR反射率对其光谱特性与时域特性的影响。
[Abstract]:Dual-wavelength semiconductor lasers have many advantages, such as high efficiency and compact structure. A dual-wavelength semiconductor laser based on distributed Bragg reflection (DBR) semiconductor laser is designed in this paper. The laser consists of DBR grating, phase region, gain region and Y-shaped waveguide. The designed wavelengths are 1064nm and 1030nm. In this paper, the reflectivity characteristics of DBR gratings under different structural parameters are simulated and calculated by using the beam propagation algorithm (BPM). The peak reflectivity and half-maximum width of DBR gratings are calculated, and the duty cycle of the rectangular grating structures is discussed. The relationship between etching depth and coupling coefficient. Finally, the threshold and spectral characteristics of 1064nmDBR laser are simulated, and compared with the experimental results, the effect of DBR reflectivity on the device performance is further analyzed, and a dual-wavelength semiconductor laser is designed with reference to the analysis results. The influence of DBR reflectivity on its spectral and time domain characteristics is analyzed.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4
本文编号：2142557
[Abstract]:Dual-wavelength semiconductor lasers have many advantages, such as high efficiency and compact structure. A dual-wavelength semiconductor laser based on distributed Bragg reflection (DBR) semiconductor laser is designed in this paper. The laser consists of DBR grating, phase region, gain region and Y-shaped waveguide. The designed wavelengths are 1064nm and 1030nm. In this paper, the reflectivity characteristics of DBR gratings under different structural parameters are simulated and calculated by using the beam propagation algorithm (BPM). The peak reflectivity and half-maximum width of DBR gratings are calculated, and the duty cycle of the rectangular grating structures is discussed. The relationship between etching depth and coupling coefficient. Finally, the threshold and spectral characteristics of 1064nmDBR laser are simulated, and compared with the experimental results, the effect of DBR reflectivity on the device performance is further analyzed, and a dual-wavelength semiconductor laser is designed with reference to the analysis results. The influence of DBR reflectivity on its spectral and time domain characteristics is analyzed.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4
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相关期刊论文 前2条
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2 ;Multi-active region laser diode with a narrow beam divergence angle[J];Optoelectronics Letters;2006年05期
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