基于棱镜扩束的光栅外腔半导体激光器的研究
发布时间：2018-07-26 07:38
【摘要】：外腔半导体激光器在纵模模式、激光线宽、调谐范围、波长稳定度等方面具有突出优点,在光频标、高分辨光谱、原子物理学等科学领域有着广泛的应用。激光器的线宽作为一个很重要的指标,一直受到了人们的关注。在本文中,利用棱镜扩束的新方案被提出用于外腔半导体激光器线宽的压窄。最开始介绍了激光二极管的基本工作原理,分析了半导体二极管外腔对线宽压窄的作用,同时介绍了光栅作用下连续可调等理论,随后对棱镜扩束原理与色散压窄线宽进行了研究,并设计和搭建了基于棱镜扩束的光栅外腔半导体激光器,给出了设计方案和机械图纸,并完成了加工和组装。建立了激光器一般主动稳频的数学模型,对稳频模型进行了仿真,通过双重PID控制改进了稳频锁定方案,实现了激光器的长时间锁定。对激光器的一般性能进行了数据记录,得到了注入电流、控温温度、激光功率、输出波长四个参量之间的关系。最后利用拍频实验与自外差实验,对比了改进型的激光器与原有激光器之间的输出激光线宽,进一步证实了棱镜扩束对外腔半导体激光器压窄线宽的贡献。具体包括以下几个方面:1.概述了外腔半导体激光器的工作原理。首先分析了激光二极管激发激光的机理,通过对二极管内腔与扩展外腔的理论分析和计算,介绍了外腔在调谐和线宽压窄中的贡献,然后通过对光栅基本方程的介绍,分析了其一般的调谐过程,并给出了机械设计上实现连续可调的方案。其次,介绍了外腔半导体激光器中的滤波方法,主要通过色散滤波器件——棱镜扩束器与光栅的建模分析,深入探讨了色散对线宽压窄的作用,通过对线宽表达式的深入探讨,最后计算了棱镜扩束的光栅外腔半导体激光器线宽公式。2.介绍了基于棱镜扩束外腔半导体激光器的实现方案,以及选择与确定了激光器各个组件的参数,详细地分析了各个部件的安装方式和机械结构需求,然后利用SolidWorks软件设计了激光器的机械结构,完成了机械加工与组装。其次分析了激光器控制电路组成,着重介绍了半导体二极管驱动电路与系统温度控制电路。最后完成了整个激光器的组装搭建和波长稳定输出。3.提出了一种新的激光稳频温度和PZT控制方案。利用双重比例-积分-微分电路(PID)同时控制激光器中的压电陶瓷和控温元件,可以同时克服快速的与缓慢的外界扰动,满足长期锁定的要求。理论上建立了激光器主动稳频系统的数学模型,分析了环境因素的影响,并在模型中引入了扰动项,得出单调连续变化的环境扰动将带来稳态误差。仿真结果表明双重控制锁相环可以改善这种稳态误差,并且在调节时间、超调量等方面也具有明显的优势。最后通过标准具PDH稳频实验,将激光器锁在了标准具稳定的腔模上,锁定效果良好。4.实验上测试和评估了研制的利用棱镜扩束新型光栅外腔半导体激光器的基本性能,得到了激光器注入电流、控温温度、激光功率、输出波长之间的关系,并利用自外差实验,对比了改进型的激光器与原有激光器之间的输出激光线宽,进一步证实了棱镜扩束对外腔半导体激光器压窄线宽的贡献;同时利用拍频实验验证了自外差线实验线宽测量数据的真实性。最后分析了基于棱镜扩束的光栅外腔半导体激光器的优点和需要改进的地方。
[Abstract]:External cavity semiconductor lasers have outstanding advantages in the longitudinal mode mode, laser linewidth, tuning range, wavelength stability and so on. It has extensive applications in the fields of optical frequency standard, high resolution spectroscopy, atomic physics and other scientific fields. The line width of laser as an important index has been paid attention to. In this paper, the prism is expanded. The new scheme is proposed to narrow the line width of the external cavity semiconductor laser. First, the basic principle of the laser diode is introduced. The effect of the outer cavity of the diode on the line width narrowing is analyzed. The theory of continuous tunability under the action of the grating is introduced. Then the principle of the beam expansion and the dispersion narrowing line width are studied. The design and construction of a grating external cavity semiconductor laser based on prism are designed and built. The design and mechanical drawings are given, and the processing and assembly are completed. A mathematical model of the frequency stabilization of the laser is established. The frequency stabilization model is simulated and the frequency locking scheme is changed by double PID control. The long time of the laser is realized. The general performance of the laser is recorded. The relationship between the injection current, temperature control temperature, laser power, and the output wavelength of the four parameters is obtained. Finally, the output laser linewidth between the improved laser and the original laser is compared by using the beat frequency experiment and the self heterodyne experiment, and the prism beam enlargement is further confirmed. The contribution of the narrow linewidth of the external cavity semiconductor laser, including the following aspects: 1. the principle of the external cavity semiconductor laser is summarized. First, the mechanism of laser diode laser excitation is analyzed. The contribution of the external cavity to the tuning and linewidth narrowing is introduced by analyzing and calculating the diode inner cavity and the extended outer cavity. After introducing the basic equation of the grating, the general tuning process is analyzed, and the continuous adjustable scheme is given in the mechanical design. Secondly, the filtering method in the external cavity semiconductor laser is introduced, mainly through the modeling and analysis of the dispersion filter, the prism beam expander and the optical grid, and the dispersion effect on the line width pressure is deeply discussed. The narrow effect, through the in-depth discussion of the line width expression, the final calculation of the line width formula of the grating external cavity semiconductor laser with prism expansion.2. introduces the realization scheme of the prism external cavity semiconductor laser based on the prism, and the selection and determination of the parameters of each component of the laser, and the detailed analysis of the installation methods of each component. The mechanical structure of the machine is needed, then the mechanical structure of the laser is designed by SolidWorks software, and the mechanical processing and assembly are completed. Secondly, the composition of the laser control circuit is analyzed. The semiconductor diode driver circuit and the system temperature control circuit are emphatically introduced. Finally, the assembly and construction of the whole laser and the stable output.3. of the wavelength are completed. A new laser frequency stabilization temperature and PZT control scheme are proposed. The dual proportional integral differential circuit (PID) is used to control the piezoceramic and temperature control elements in the laser at the same time. It can simultaneously overcome the fast and slow external disturbances and meet the requirement of long-term locking. The influence of environmental factors is analyzed, and the disturbance term is introduced in the model. It is concluded that the environment disturbance with monotone continuous change will bring steady state error. The simulation results show that the dual control phase locked loop can improve the steady-state error and have obvious advantages in the adjustment time and overshoot. Finally, the standard PDH frequency stabilization experiment is carried out. The laser is locked on the stable cavity die of the etalon, and the locking effect is good.4. test and evaluation of the basic performance of a new type of grating external cavity semiconductor laser using prism. The relationship between the injection current, temperature control temperature, laser power and output wavelength is obtained, and the self heterodyne experiment is used to compare the change of the laser beam. The output laser linewidth between the input laser and the original laser further confirms the contribution of the prism to the narrow linewidth of the external cavity semiconductor laser. At the same time, the authenticity of the measured data is verified by the beat frequency experiment. Finally, the advantages of the grating external cavity semiconductor laser based on the prism beam expansion are analyzed. Points and areas that need to be improved.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248.4
本文编号：2145319
[Abstract]:External cavity semiconductor lasers have outstanding advantages in the longitudinal mode mode, laser linewidth, tuning range, wavelength stability and so on. It has extensive applications in the fields of optical frequency standard, high resolution spectroscopy, atomic physics and other scientific fields. The line width of laser as an important index has been paid attention to. In this paper, the prism is expanded. The new scheme is proposed to narrow the line width of the external cavity semiconductor laser. First, the basic principle of the laser diode is introduced. The effect of the outer cavity of the diode on the line width narrowing is analyzed. The theory of continuous tunability under the action of the grating is introduced. Then the principle of the beam expansion and the dispersion narrowing line width are studied. The design and construction of a grating external cavity semiconductor laser based on prism are designed and built. The design and mechanical drawings are given, and the processing and assembly are completed. A mathematical model of the frequency stabilization of the laser is established. The frequency stabilization model is simulated and the frequency locking scheme is changed by double PID control. The long time of the laser is realized. The general performance of the laser is recorded. The relationship between the injection current, temperature control temperature, laser power, and the output wavelength of the four parameters is obtained. Finally, the output laser linewidth between the improved laser and the original laser is compared by using the beat frequency experiment and the self heterodyne experiment, and the prism beam enlargement is further confirmed. The contribution of the narrow linewidth of the external cavity semiconductor laser, including the following aspects: 1. the principle of the external cavity semiconductor laser is summarized. First, the mechanism of laser diode laser excitation is analyzed. The contribution of the external cavity to the tuning and linewidth narrowing is introduced by analyzing and calculating the diode inner cavity and the extended outer cavity. After introducing the basic equation of the grating, the general tuning process is analyzed, and the continuous adjustable scheme is given in the mechanical design. Secondly, the filtering method in the external cavity semiconductor laser is introduced, mainly through the modeling and analysis of the dispersion filter, the prism beam expander and the optical grid, and the dispersion effect on the line width pressure is deeply discussed. The narrow effect, through the in-depth discussion of the line width expression, the final calculation of the line width formula of the grating external cavity semiconductor laser with prism expansion.2. introduces the realization scheme of the prism external cavity semiconductor laser based on the prism, and the selection and determination of the parameters of each component of the laser, and the detailed analysis of the installation methods of each component. The mechanical structure of the machine is needed, then the mechanical structure of the laser is designed by SolidWorks software, and the mechanical processing and assembly are completed. Secondly, the composition of the laser control circuit is analyzed. The semiconductor diode driver circuit and the system temperature control circuit are emphatically introduced. Finally, the assembly and construction of the whole laser and the stable output.3. of the wavelength are completed. A new laser frequency stabilization temperature and PZT control scheme are proposed. The dual proportional integral differential circuit (PID) is used to control the piezoceramic and temperature control elements in the laser at the same time. It can simultaneously overcome the fast and slow external disturbances and meet the requirement of long-term locking. The influence of environmental factors is analyzed, and the disturbance term is introduced in the model. It is concluded that the environment disturbance with monotone continuous change will bring steady state error. The simulation results show that the dual control phase locked loop can improve the steady-state error and have obvious advantages in the adjustment time and overshoot. Finally, the standard PDH frequency stabilization experiment is carried out. The laser is locked on the stable cavity die of the etalon, and the locking effect is good.4. test and evaluation of the basic performance of a new type of grating external cavity semiconductor laser using prism. The relationship between the injection current, temperature control temperature, laser power and output wavelength is obtained, and the self heterodyne experiment is used to compare the change of the laser beam. The output laser linewidth between the input laser and the original laser further confirms the contribution of the prism to the narrow linewidth of the external cavity semiconductor laser. At the same time, the authenticity of the measured data is verified by the beat frequency experiment. Finally, the advantages of the grating external cavity semiconductor laser based on the prism beam expansion are analyzed. Points and areas that need to be improved.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248.4
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