光注入法布里—珀罗半导体激光器的动态特性研究

发布时间：2018-07-28 06:59

【摘要】：半导体激光器技术近年来发展迅猛,半导体激光器的性能也在不断的提升,因此被广泛用于光纤通信和高速光网络当中。随着现代光纤网络对高速度、高容量、高带宽的日益需求,对半导体激光器的稳定性、线宽、调制带宽的要求也越来越高。法布里-珀罗(F-P)半导体激光器在商用光纤网络已经得到广泛应用,但是F-P半导体激光器是多模激光器,而且稳定性和调制带宽都不高,利用光注入技术可以使F-P半导体激光器输出稳定的单模激光,同时提高其直接调制的3dB带宽。而且,光注入半导体激光器在光生微波中具有重要应用,光生微波是光载无线通信(Radio-over-Fibre,RoF)系统中的核心技术之一。本文介绍了半导体激光器的发展现状、光注入半导体激光器的发展现状及其非线性状态的应用进展,对光注入半导体激光器运用半导体激光器速率方程介质增益模型进行分析及数值仿真,并针对光注入F-P半导体激光器的非线性状态进行了详细的研究和讨论,研究了光注入锁定半导体激光器在测量半导体激光器线宽增强因子和改善半导体激光器3dB调制带宽方面的应用。主要内容如下:1.利用半导体激光器的速率方程结合介质增益模型对注入锁定过程理论分析,对注入锁定过程中光子数密度和载流子数密度变化进行了数值仿真;2.研究了注入锁定过程当中各个参量对注入锁定的不同影响,在实验上论证了注入锁定的主从激光器频率正失谐和负失谐的差异性,并对注入锁定后F-P半导体激光器输出光的光谱和功率作了详细讨论,对光注入半导体激光器的各个非线性状态进行了研究,绘制了在不同注入功率和不同频率失谐下的非线性状态的分布点图;3.对光注入锁定半导体激光器的应用作了初步研究,利用光注入半导体激光器时锁定状态的不对称性,测定在一定工作电流下的半导体激光器的线宽增强因子,利用光注入锁定对直调激光器的频率响应的改善,分析了注入光功率和主从激光器失谐对F-P半导体激光器频率响应的不同影响;利用光注入激光器产生频率可调谐的微波信号。
[Abstract]:Semiconductor laser technology has been developed rapidly in recent years, and the performance of semiconductor laser has been continuously improved, so it is widely used in optical fiber communication and high-speed optical networks. With the increasing demand for high speed, high capacity and high bandwidth in modern optical fiber networks, the stability, linewidth and modulation bandwidth of semiconductor lasers are becoming more and more important. Fabry-Perot (F-P) semiconductor lasers have been widely used in commercial fiber networks, but F-P semiconductor lasers are multimode lasers and have low stability and modulation bandwidth. The optical injection technique can make the F-P semiconductor laser output stable single-mode laser and increase the 3dB bandwidth of its direct modulation. Moreover, optical injection semiconductor lasers have important applications in photogenerated microwave, which is one of the core technologies in radio-over-Fibre-RoF systems. In this paper, the development of semiconductor lasers, the development of optical injection semiconductor lasers and the application of nonlinear states are introduced. The optical injection semiconductor laser is analyzed and numerically simulated by using the medium gain model of the semiconductor laser rate equation. The nonlinear state of the optical injection F-P semiconductor laser is studied and discussed in detail. The application of optical injection locked semiconductor laser in measuring the linewidth enhancement factor of semiconductor laser and improving the 3dB modulation bandwidth of semiconductor laser is studied. The main content is as follows: 1. By using the rate equation of the semiconductor laser and the medium gain model, the theoretical analysis of the injection locking process is carried out, and the variation of photon number density and carrier number density during the injection locking process is numerically simulated. The effects of various parameters on injection locking are studied, and the difference between positive detuning and negative detuning of injection-locked master-slave lasers is demonstrated experimentally. The spectrum and power of the output light of the injected locked F-P semiconductor laser are discussed in detail, and the nonlinear states of the laser are studied. The distribution point diagram of nonlinear state under different injection power and different frequency detuning is plotted. The application of optical injection locked semiconductor laser is studied preliminarily. The linewidth enhancement factor of semiconductor laser at a certain working current is measured by using the asymmetry of the locked state when the laser is injected into the semiconductor laser. The different effects of injection power and master-slave detuning on the frequency response of F-P semiconductor laser are analyzed by improving the frequency response of direct-modulated laser by optical injection locking, and the frequency tunable microwave signal is generated by optical injection laser.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN248.4

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