GLSI多层铜布线碱性抛光液稳定性的研究
发布时间：2018-07-29 12:07
【摘要】：新器件、新材料和新工艺不断推动着集成电路按照摩尔定律快速发展。越来越高的集成度,越来越小的特征尺寸和越来越大的晶圆面积对超精密加工技术提出了更高的挑战。化学机械平坦化(chemical mechanical planarization,简称CMP)作为目前应用最广泛的全局平坦化方法一直是研究的热点。抛光液是整个CMP工艺中最主要的耗材,其性能的好坏直接决定着整个晶圆的全局平坦化效果。河北工业大学微电子研究所自主研发的FA/O系列铜布线碱性抛光液在不加BTA的基础上,得到了很好的平坦化效果。能够有效解决碟形坑、腐蚀坑和表面粗糙度大的技术难题,并且对设备的腐蚀性弱,环保性好,具有非常好的产业化前景。然而该系列碱性抛光液也存在着所有抛光液都存在的共性问题,即稳定性差。FA/O系列铜布线碱性抛光液的稳定性主要包含两个方面:(1)一方面是抛光液原液的稳定性,原液指的是没有经过稀释和加入氧化剂的抛光液,各组分浓度较高,使用时需要用大量去离子水稀释。(2)另一方面是抛光液使用液的稳定性,使用液指的是经过稀释和加入氧化剂之后直接用来使用的抛光液。稳定性问题得不到解决,抛光液无法实现产业化。针对碱性抛光液稳定性问题,本文主要做了以下研究:(1)首先,分析了原液的不稳定机理。通过单因素实验研究了螯合剂浓度、活性剂浓度、SiO2磨料浓度及配置工艺对原液稳定性的影响。(2)然后,分析了使用液的不稳定机理。通过正交实验研究了H2O2氧化剂浓度、螯合剂浓度对使用液稳定性的影响。(3)另外,分析了H2O2稳定剂的作用机理。研究了不同类型H2O2稳定剂对使用液稳定性的影响。(4)最后,研究了不同类型螯合剂对抛光液使用液稳定性的影响。最终在前人的研究基础上,进一步延长了原液的稳定时间,同时也有效延长了使用液的稳定时间。原液稳定半年以上,粗抛液稳定12小时以上,精抛液稳定24小时以上,基本可以满足产业化应用的要求。
[Abstract]:New devices, new materials and new technologies have continuously promoted the rapid development of integrated circuits in accordance with Moore's law. The increasing integration, smaller and smaller feature size and increasing wafer area have challenged the ultra precision machining technology. Chemical mechanical planarization (chemical mechanical planarization, referred to as CMP) is currently used as the present. The most widely used global planarization method has always been the hot spot of research. The polishing liquid is the most important material in the whole CMP process. Its performance is directly determined by the overall planarization effect of the whole wafer. The FA/O series copper wiring alkaline polishing liquid developed by the Institute of microelectronics of Hebei University of Technology has been obtained on the basis of without BTA. It has good flatting effect. It can effectively solve the technical problems of big dish pit, corrosion pit and surface roughness, and it has weak corrosion to the equipment, good environmental protection, and has a very good industrialization prospect. However, this series of alkaline polishing liquid also exists the common problem of all polishing liquid, that is,.FA/O series copper wiring with poor stability. The stability of alkaline polishing liquid mainly consists of two aspects: (1) the stability of the raw liquid of the polishing liquid on the one hand, the original liquid refers to the polishing solution without dilution and oxidizing agent. The concentration of each component is higher and the use of a large amount of deionized water is needed to dilute the solution. (2) the other is the stability of the use liquid of the polishing solution, and the use of liquid refers to the process. The stability problem can not be solved and the polishing solution can not be industrialized. In this paper, the following research is made on the stability problem of alkaline polishing liquid. (1) first, the instability mechanism of the original liquid is analyzed. The concentration of chelating agent, the concentration of active agent, and Si are studied by the single factor experiment. The effect of O2 abrasive concentration and configuration process on the stability of the original liquid. (2) the instability mechanism of the liquid was analyzed. The influence of the concentration of H2O2 oxidant and the concentration of chelating agent on the stability of the use liquid was studied by orthogonal experiment. (3) the action mechanism of H2O2 stabilizers was analyzed. The stability of different types of H2O2 stabilizers for the use of liquid stability was studied. 4. (4) finally, the effects of different types of chelating agents on the stability of the liquid use liquid were studied. On the basis of previous studies, the stability time of the original liquid was further extended and the stability time of the liquid was prolonged. The crude liquid was stable for more than half a year, the crude liquid was stable for more than 12 hours and the polishing liquid was stable for 24 hours. On the other hand, it can basically meet the requirements of industrial application.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.2
本文编号：2152626
[Abstract]:New devices, new materials and new technologies have continuously promoted the rapid development of integrated circuits in accordance with Moore's law. The increasing integration, smaller and smaller feature size and increasing wafer area have challenged the ultra precision machining technology. Chemical mechanical planarization (chemical mechanical planarization, referred to as CMP) is currently used as the present. The most widely used global planarization method has always been the hot spot of research. The polishing liquid is the most important material in the whole CMP process. Its performance is directly determined by the overall planarization effect of the whole wafer. The FA/O series copper wiring alkaline polishing liquid developed by the Institute of microelectronics of Hebei University of Technology has been obtained on the basis of without BTA. It has good flatting effect. It can effectively solve the technical problems of big dish pit, corrosion pit and surface roughness, and it has weak corrosion to the equipment, good environmental protection, and has a very good industrialization prospect. However, this series of alkaline polishing liquid also exists the common problem of all polishing liquid, that is,.FA/O series copper wiring with poor stability. The stability of alkaline polishing liquid mainly consists of two aspects: (1) the stability of the raw liquid of the polishing liquid on the one hand, the original liquid refers to the polishing solution without dilution and oxidizing agent. The concentration of each component is higher and the use of a large amount of deionized water is needed to dilute the solution. (2) the other is the stability of the use liquid of the polishing solution, and the use of liquid refers to the process. The stability problem can not be solved and the polishing solution can not be industrialized. In this paper, the following research is made on the stability problem of alkaline polishing liquid. (1) first, the instability mechanism of the original liquid is analyzed. The concentration of chelating agent, the concentration of active agent, and Si are studied by the single factor experiment. The effect of O2 abrasive concentration and configuration process on the stability of the original liquid. (2) the instability mechanism of the liquid was analyzed. The influence of the concentration of H2O2 oxidant and the concentration of chelating agent on the stability of the use liquid was studied by orthogonal experiment. (3) the action mechanism of H2O2 stabilizers was analyzed. The stability of different types of H2O2 stabilizers for the use of liquid stability was studied. 4. (4) finally, the effects of different types of chelating agents on the stability of the liquid use liquid were studied. On the basis of previous studies, the stability time of the original liquid was further extended and the stability time of the liquid was prolonged. The crude liquid was stable for more than half a year, the crude liquid was stable for more than 12 hours and the polishing liquid was stable for 24 hours. On the other hand, it can basically meet the requirements of industrial application.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.2
【参考文献】
相关期刊论文 前1条
1 蔡婷;刘玉岭;王辰伟;陈蕊;高娇娇;;弱碱性多羟多胺抛光液稳定性[J];微纳电子技术;2013年12期
，本文编号：2152626
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