基于内聚力模型的红外焦平面探测器失效分析
发布时间：2018-07-29 16:37
【摘要】：红外焦平面探测器(Infrared Focal Plane Array,IRFPA)是航空航天红外遥感、气象、国防和科学实验仪器等领域实现探测和追踪的重要组件。为提高灵敏度和信噪比,In Sb面阵探测器需要通过制冷设备从300K的室温迅速地下降至液氮温度(77K)。然而在热冲击过程中,由于InSb面阵探测器特定的层状结构、低温工作环境和各材料间线膨胀系数等材料参数属性的不同性,将会在InSb面阵探测器的器件内部引起过应力/变,进而导致光敏元芯片(InSb)分层,甚至会有裂纹萌生、扩展。上述分层和碎裂问题严重制约着红外焦平面探测器的可靠性和适用性,已经成为红外焦平面探测器批量生产中的主要障碍之一。本文是以课题组前期对InSb面阵探测器的结构仿真为背景,基于有限元分析和双线性内聚力模型相结合,在128×128阵列In Sb焦平面探测器的等效有限元模型中选取出Von Mises应力最大的N电极区域进行预置裂纹处理,即在N电极和InSb芯片的接触面内以及InSb芯片的内部添加内聚力元素并且合理地选取InSb芯片的裂纹扩展参数,进而形成预置裂纹,模拟出InSb光敏元芯片分层、碎裂的裂纹过程以及分层、碎裂失效后的应力/变分布特征。InSb芯片的分层失效数据显示,在处于同一位置的两内聚节点的应变数据中,只有Z轴上的相对应变量是随着加载时间慢慢增大的,验证了本文选取I型失效模式研究InSb芯片分层失效中裂纹扩展的正确性。采用降温载荷模式的实验结果表明:In Sb面阵探测器的形变方向与实际的形变方向是相反的,尤其是在InSb光敏元芯片与In柱阵列的连接处较为明显。鉴于材料参数的线弹性,调整参考温度并且采用升温载荷模式,模拟出分层后N电极正上方区域的In Sb芯片呈带状凸起,N电极附近局部剖面呈现对称的钟型分布,而且InSb芯片上表面形成的凸起和凹陷部分呈周期性的二维分布,上述仿真结果几乎与实际的InSb面阵探测器形变照片是完全匹配的。在InSb芯片发生分层和碎裂失效后,表面上均存在着较大的应力梯度,其中应力梯度密集区域和裂缝最大值区域是和实际的InSb芯片碎裂最大概率区域相吻合的。最后,给出一种新型三维裂纹扩展模拟方法,详细地给出了添加内聚力元素的APDL程序,并对计算过程中出现的不收敛性做出简要的分析。本文给出了课题组前期分析所不具有的InSb面阵探测器结构分析理论,而且演示了In Sb芯片的裂纹萌生、扩展以及裂纹扩展后的应力/变分布特征,完善了课题组前期的InSb面阵探测器结构分析的理论体系,为研究器件的失效裂纹扩展提供了参考依据。
[Abstract]:Infrared focal plane detector (Infrared Focal Plane) is an important component in the field of aerospace infrared remote sensing, meteorology, national defense and scientific experimental instruments. In order to improve the sensitivity and signal-to-noise ratio (SNR) of InSb array detectors, the temperature of liquid nitrogen (77K) has to be rapidly reduced from 300K to 77K. However, in the process of thermal shock, due to the different properties of material parameters such as the specific layered structure of the InSb array detector, the working environment at low temperature and the coefficient of linear expansion among different materials, the overstress / variation will be caused in the device of the InSb array detector. In turn, the Guang Min meta-chip (InSb) delamination and even crack initiation and propagation. The problem of delamination and fragmentation has seriously restricted the reliability and applicability of the infrared focal plane detector and has become one of the main obstacles in the mass production of the infrared focal plane detector. This paper is based on the structural simulation of InSb array detector in the early stage of the research group, based on the combination of finite element analysis and bilinear cohesive force model. In the equivalent finite element model of 128 脳 128 array in Sb focal plane detector, the N electrode region with the largest Von Mises stress is selected for pre-crack treatment. That is to say, adding cohesion elements into the interface between N electrode and InSb chip and inside the InSb chip, and selecting the crack growth parameters of InSb chip reasonably, and then forming the preset crack, and simulating the delamination of InSb Guang Min meta-chip. Fracture process and delamination, stress / variation distribution characteristics after fracture failure. The delamination failure data of InSb chip show that, in the strain data of two cohesive nodes in the same position, Only the corresponding variables on the Z axis increase with the loading time, which verifies the correctness of the mode I failure mode to study the crack propagation in the delamination failure of InSb chips. The experimental results using the cooling load mode show that the deformation direction of the InSb in SB array detector is opposite to that of the actual one, especially at the junction between the InSb Guang Min element chip and the in column array. In view of the linear elasticity of the material parameters, adjusting the reference temperature and adopting the temperature rise load mode, it is simulated that the in SB chip in the upper region of the N electrode after delamination shows a symmetrical bell-like distribution near the local profile of the N electrode. Moreover, the protrusions and depressions formed on the surface of InSb chip show periodic two-dimensional distribution. The simulation results are almost identical to the actual deformation photos of InSb array detectors. After the delamination and fracture failure of InSb chip, there is a large stress gradient on the surface, and the stress gradient dense region and the crack maximum region are consistent with the actual maximum probability region of InSb chip fragmentation. Finally, a new three-dimensional crack propagation simulation method is presented, and the APDL program of adding cohesive force elements is given in detail, and the non-convergence in the calculation process is analyzed briefly. In this paper, the structure analysis theory of InSb array detector is presented, which is not available in the previous analysis of our group, and the characteristics of crack initiation, propagation and stress / variation distribution after crack propagation are demonstrated. The theoretical system for structural analysis of InSb array detectors in the early stage of the research group is perfected, which provides a reference for studying the failure crack propagation of the devices.
【学位授予单位】：河南科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN215
本文编号：2153311
[Abstract]:Infrared focal plane detector (Infrared Focal Plane) is an important component in the field of aerospace infrared remote sensing, meteorology, national defense and scientific experimental instruments. In order to improve the sensitivity and signal-to-noise ratio (SNR) of InSb array detectors, the temperature of liquid nitrogen (77K) has to be rapidly reduced from 300K to 77K. However, in the process of thermal shock, due to the different properties of material parameters such as the specific layered structure of the InSb array detector, the working environment at low temperature and the coefficient of linear expansion among different materials, the overstress / variation will be caused in the device of the InSb array detector. In turn, the Guang Min meta-chip (InSb) delamination and even crack initiation and propagation. The problem of delamination and fragmentation has seriously restricted the reliability and applicability of the infrared focal plane detector and has become one of the main obstacles in the mass production of the infrared focal plane detector. This paper is based on the structural simulation of InSb array detector in the early stage of the research group, based on the combination of finite element analysis and bilinear cohesive force model. In the equivalent finite element model of 128 脳 128 array in Sb focal plane detector, the N electrode region with the largest Von Mises stress is selected for pre-crack treatment. That is to say, adding cohesion elements into the interface between N electrode and InSb chip and inside the InSb chip, and selecting the crack growth parameters of InSb chip reasonably, and then forming the preset crack, and simulating the delamination of InSb Guang Min meta-chip. Fracture process and delamination, stress / variation distribution characteristics after fracture failure. The delamination failure data of InSb chip show that, in the strain data of two cohesive nodes in the same position, Only the corresponding variables on the Z axis increase with the loading time, which verifies the correctness of the mode I failure mode to study the crack propagation in the delamination failure of InSb chips. The experimental results using the cooling load mode show that the deformation direction of the InSb in SB array detector is opposite to that of the actual one, especially at the junction between the InSb Guang Min element chip and the in column array. In view of the linear elasticity of the material parameters, adjusting the reference temperature and adopting the temperature rise load mode, it is simulated that the in SB chip in the upper region of the N electrode after delamination shows a symmetrical bell-like distribution near the local profile of the N electrode. Moreover, the protrusions and depressions formed on the surface of InSb chip show periodic two-dimensional distribution. The simulation results are almost identical to the actual deformation photos of InSb array detectors. After the delamination and fracture failure of InSb chip, there is a large stress gradient on the surface, and the stress gradient dense region and the crack maximum region are consistent with the actual maximum probability region of InSb chip fragmentation. Finally, a new three-dimensional crack propagation simulation method is presented, and the APDL program of adding cohesive force elements is given in detail, and the non-convergence in the calculation process is analyzed briefly. In this paper, the structure analysis theory of InSb array detector is presented, which is not available in the previous analysis of our group, and the characteristics of crack initiation, propagation and stress / variation distribution after crack propagation are demonstrated. The theoretical system for structural analysis of InSb array detectors in the early stage of the research group is perfected, which provides a reference for studying the failure crack propagation of the devices.
【学位授予单位】：河南科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN215
【参考文献】
相关期刊论文 前6条
1 王永刚;胡剑东;王礼立;;金属材料层裂破坏的内聚力模型[J];固体力学学报;2012年05期
2 谢敏,张安哥;起重机焊接箱形梁的疲劳分析与寿命估算[J];华东交通大学学报;1993年04期
3 陈伯良,孙维国,梁平治,郑志伟,王正官,朱晓池,江美玲,龚启兵,丁瑞军,黄水安;InSb凝视红外焦平面组件研制和应用[J];红外与激光工程;2002年05期
4 张群,陈柳,程波,徐步陆,王国忠,程兆年,谢晓明;倒装焊Sn—Pb焊点的热疲劳失效[J];金属学报;2001年07期
5 史衍丽;;第三代红外探测器的发展与选择[J];红外技术;2013年01期
6 孟庆端;余倩;张立文;吕衍秋;;InSb面阵探测器法线方向力学参数选取研究[J];物理学报;2012年22期
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