微片激光器阈值附近的输出光谱特性研究
发布时间：2018-07-30 06:47
【摘要】：为了确定激光晶体在不同温度下的自发辐射光谱(荧光谱),实验研究了阈值附近微片激光器的输出光谱特性。当抽运功率略小于阈值时,微片激光器输出经干涉的自发辐射光;当抽运功率大于阈值时,微片激光器输出激光。测量了激光阈值与晶体温控的关系,结果表明激光阈值随晶体温度的升高而增加,其变化率为0.017 W/℃。在不同温控条件下,对阈值以下的自发辐射光谱包络进行了拟合测量,结果表明随着晶体温度的升高自发辐射光谱包络峰值降低,下降率为0.681%/℃;光谱包络中心波长发生红移,漂移率为3.1pm/℃。
[Abstract]:In order to determine the spontaneous emission spectra (fluorescence spectra) of laser crystals at different temperatures, the output spectra of microchip lasers near the threshold are experimentally studied. When the pump power is slightly lower than the threshold, the microchip laser outputs the interference spontaneous emission, and when the pump power is greater than the threshold, the microchip laser outputs the laser. The relationship between laser threshold and crystal temperature control is measured. The results show that the laser threshold increases with the increase of crystal temperature, and the change rate is 0.017 W / 鈩，
本文编号：2154174
[Abstract]:In order to determine the spontaneous emission spectra (fluorescence spectra) of laser crystals at different temperatures, the output spectra of microchip lasers near the threshold are experimentally studied. When the pump power is slightly lower than the threshold, the microchip laser outputs the interference spontaneous emission, and when the pump power is greater than the threshold, the microchip laser outputs the laser. The relationship between laser threshold and crystal temperature control is measured. The results show that the laser threshold increases with the increase of crystal temperature, and the change rate is 0.017 W / 鈩，
本文编号：2154174
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2154174.html
