基于多重反馈环路技术的0.8～5.2GHz CMOS宽带LNA设计

发布时间：2018-08-01 13:58

【摘要】：在传统共栅放大器结构基础上,基于0.18μm CMOS工艺,提出一种带多重反馈环路技术的0.8~5.2GHz宽带低噪声放大器(LNA).该电路采用的负反馈结构在改善噪声系数和输入阻抗匹配的同时并不需要消耗额外的功耗;采用的双重正反馈结构增加了输入级MOS管跨导设计的灵活性,并可通过输出负载阻抗反过来控制输入阻抗匹配,使得提出的LNA在宽频率范围内实现功率增益、输入阻抗与噪声系数的同时优化.后版图仿真结果显示,在0.8~5.2GHz频段内,该宽带LNA的功率增益范围为12.0~14.5dB,输入反射系数S_(11)为-8.0~-17.6dB,输出反射系数S_(22)为-10.0~-32.4dB,反向传输系数S12小于-45.6dB,噪声系数NF为3.7~4.1dB.在3GHz时的输入三阶交调点IIP3为-4.0dBm.芯片在1.5V电源电压下,消耗的功率仅为9.0mW,芯片总面积为0.7mm×0.8mm.
[Abstract]:Based on the traditional structure of the common-gate amplifier and 0.18 渭 m CMOS process, a 0.8~5.2GHz wideband low-noise amplifier (LNA).) with multiple feedback loops is proposed. The negative feedback structure can improve the matching of the noise coefficient and the input impedance without consuming extra power, and the dual positive feedback structure increases the flexibility of the transconductance design of the input stage MOS transistors. The input impedance matching can be controlled by output load impedance in turn, which makes the proposed LNA achieve power gain and optimization of input impedance and noise coefficient in a wide frequency range. The simulation results show that in the 0.8~5.2GHz band, the power gain range of the wideband LNA is 12.0 ~ 14.5 dB, the input reflection coefficient S11 is -8.0 ~ 17.6dB, the output reflection coefficient S22 is -10.0 ~ 32.4 dB, the reverse transmission coefficient S12 is less than -45.6dB, and the noise coefficient is 3.74.1dB. The input third-order crossover point IIP3 at 3GHz is -4.0 dBm. The power consumption of the chip is only 9.0 MW at 1.5V power supply voltage, and the total area of the chip is 0.7mm 脳 0.8mm.
【作者单位】：湖南师范大学物理与信息科学学院;
【基金】：湖南省自然科学基金资助项目(2016JJ6095) 湖南省教育厅科学研究项目(14B107) 湖南师范大学青年优秀人才培养项目(ET14102) 国家级大学生创新创业训练计划项目(201610542009)~~
【分类号】：TN722.3

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