Ka波段GaN HEMT单片集成功率放大器的设计
发布时间：2018-08-03 09:31
【摘要】：随着有源相控阵雷达高集成度和小型化的发展,对功率放大器的输出功率、效率、尺寸等指标也提出了更高的要求。基于第三代半导体材料氮化镓(GaN)的单片微波集成功率放大器以其具有高功率密度、高效率、耐高温以及较强的抗辐射能力等优点正成为全球研究的前沿和热点,具有重要的研究价值和意义。而随着下一代雷达系统工作频率的提高,发展毫米波GaN功率放大器已迫在眉睫。本文在研究了GaN高电子迁移率晶体管(HEMT)的物理模型及无源器件的基础上,设计并制作了Ka波段GaN HEMT单片微波集成功率放大器,放大器采用二级四路结构,最终芯片实物在片测试取得了较好的结果。主要工作如下:本文首先分析了功率放大器中的有源器件GaN HEMT的物理结构及其工作原理;分析了单片微波集成电路设计中常用的微带线、电阻、电感、电容等无源器件,利用HFSS进行建模与仿真,分析得到无源器件的物理尺寸与器件取值、品质因数Q的关系。在以上研究基础上,完成了Ka波段GaN HEMT单片微波集成功率放大器的设计,主要涉及单级功率放大器设计、多级放大器的拓扑结构设计、稳定性电路设计、匹配电路以及功率合成网络的设计等。结合相关的流片工艺,利用ADS进行了电路的整体仿真,并通过ADS自带的Momentum工具进行了版图仿真和电磁场联合仿真,最终设计的功率放大器取得到了较好的结果。最后,对设计的功率放大器完成了芯片实物制作和在片测试,测试结果显示在33.5GHz~34.5GHz工作频带内,放大器输出功率大于34dBm,增益大于7dB,带内增益平坦度优于?0.5dB,功率附加效率高于8%,在34.2GHz频点处,输出功率最高达到34.9dBm,增益7.9dB,功率附加效率9.2%。
[Abstract]:With the development of high integration and miniaturization of active phased array radar, the output power, efficiency and size of power amplifier are required to be higher. The monolithic microwave integrated power amplifier based on the third generation semiconductor material gallium nitride (GaN) is becoming a hot spot in the world because of its advantages of high power density, high efficiency, high temperature resistance and strong radiation resistance. It has important research value and significance. With the improvement of the frequency of the next generation radar system, the development of millimeter wave GaN power amplifier is imminent. Based on the study of the physical model and passive devices of GaN high electron mobility transistor (HEMT), a Ka-band GaN HEMT monolithic microwave integrated power amplifier is designed and fabricated. The amplifier adopts a two-stage four-channel structure. Finally, good results are obtained in the chip test. The main work is as follows: firstly, the physical structure and working principle of the active device GaN HEMT in the power amplifier are analyzed, and the passive devices such as microstrip line, resistance, inductance, capacitance and so on in the design of monolithic microwave integrated circuit are analyzed. Using HFSS to model and simulate, the relationship between physical size and device value, quality factor Q of passive device is obtained. Based on the above research, the design of Ka-band GaN HEMT monolithic microwave integrated power amplifier is completed, which mainly involves the design of single-stage power amplifier, the topology design of multi-stage amplifier and the design of stability circuit. The design of matching circuit and power synthesis network. The whole circuit is simulated by ADS, and the layout simulation and electromagnetic field simulation are carried out by using the Momentum tool of ADS. The result of the power amplifier design is satisfactory. Finally, the designed power amplifier is fabricated and tested in the chip. The test results are shown in the 33.5GHz~34.5GHz operating band. The output power of the amplifier is greater than 34dBm, the gain is larger than 7dB.The in-band gain flatness is better than 0.5 dB, and the power additional efficiency is higher than 8. At the 34.2GHz frequency point, the output power is up to 34.9dBm, the gain is 7.9dB, and the power additional efficiency is 9.2dB.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
本文编号：2161323
[Abstract]:With the development of high integration and miniaturization of active phased array radar, the output power, efficiency and size of power amplifier are required to be higher. The monolithic microwave integrated power amplifier based on the third generation semiconductor material gallium nitride (GaN) is becoming a hot spot in the world because of its advantages of high power density, high efficiency, high temperature resistance and strong radiation resistance. It has important research value and significance. With the improvement of the frequency of the next generation radar system, the development of millimeter wave GaN power amplifier is imminent. Based on the study of the physical model and passive devices of GaN high electron mobility transistor (HEMT), a Ka-band GaN HEMT monolithic microwave integrated power amplifier is designed and fabricated. The amplifier adopts a two-stage four-channel structure. Finally, good results are obtained in the chip test. The main work is as follows: firstly, the physical structure and working principle of the active device GaN HEMT in the power amplifier are analyzed, and the passive devices such as microstrip line, resistance, inductance, capacitance and so on in the design of monolithic microwave integrated circuit are analyzed. Using HFSS to model and simulate, the relationship between physical size and device value, quality factor Q of passive device is obtained. Based on the above research, the design of Ka-band GaN HEMT monolithic microwave integrated power amplifier is completed, which mainly involves the design of single-stage power amplifier, the topology design of multi-stage amplifier and the design of stability circuit. The design of matching circuit and power synthesis network. The whole circuit is simulated by ADS, and the layout simulation and electromagnetic field simulation are carried out by using the Momentum tool of ADS. The result of the power amplifier design is satisfactory. Finally, the designed power amplifier is fabricated and tested in the chip. The test results are shown in the 33.5GHz~34.5GHz operating band. The output power of the amplifier is greater than 34dBm, the gain is larger than 7dB.The in-band gain flatness is better than 0.5 dB, and the power additional efficiency is higher than 8. At the 34.2GHz frequency point, the output power is up to 34.9dBm, the gain is 7.9dB, and the power additional efficiency is 9.2dB.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
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