重掺硼硅片表面清洗研究

发布时间：2018-08-07 08:59

【摘要】：研究了SC-1清洗过程对重掺硼和轻掺硼硅片表面颗粒、微粗糙度的影响及其清洗后硅片表面化学组态分布,采用表面颗粒激光扫描仪、原子力显微镜及X射线光电子能谱(XPS)对重掺硼和轻掺硼硅片在SC-1清洗过程中表现的不同清洗特性进行分析。结果表明:在SC-1清洗中,重掺硼硅片表面更容易吸附颗粒,需要更长的清洗时间来得到清洁表面;随清洗时间延长,重轻掺硅片表面微粗糙度均有增大趋势,且重掺硼硅片表面微粗糙度始终比轻掺硼硅片大,通过表面高度结果可知,相同清洗条件下,重掺硼硅片表面纵向腐蚀深度比轻掺硼大0.3 nm,与(111)面的晶面间距相近;XPS结果显示重掺硼硅单晶中大量硼原子的引入对SC-1清洗过程中的各向异性腐蚀有一定的增强效果,适当改变SC-1清洗中的氧化剂的含量有助于得到更好的表面质量。
[Abstract]:The effect of SC-1 cleaning process on the surface particles of heavy and light boron doped silicon wafers and the distribution of chemical configuration on the surface of the wafers after cleaning were studied. The surface particle laser scanner was used. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the different cleaning characteristics of heavy and light boron doped silicon wafers during SC-1 cleaning. The results show that the surface of heavy boron doped silicon wafer is easier to adsorb particles and need longer cleaning time to get clean surface during SC-1 cleaning, and the surface roughness of heavy and light doped silicon wafers increases with the increase of cleaning time. The surface microroughness of heavy boron doped silicon wafer is always greater than that of light boron doped silicon wafer. The results of surface height show that under the same cleaning conditions, The longitudinal corrosion depth of heavy boron doped silicon wafer is 0.3 nm larger than that of light boron doped silicon wafer. The results of XPS show that the introduction of a large number of boron atoms in heavily boron doped silicon single crystal can enhance the anisotropic corrosion during SC-1 cleaning. Proper change of oxidant content in SC-1 cleaning is helpful to obtain better surface quality.
【作者单位】：北京有色金属研究总院有研半导体材料有限公司;
【基金】：国家科技重大专项项目(2010zx02302-001)资助
【分类号】：TN304.12

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