IGBT功率模块瞬态热阻抗测量方法研究

发布时间：2018-08-12 13:07

【摘要】：绝缘栅双极型晶体管(IGBT)的瞬态热阻抗曲线可表征器件的退化状态,对器件损伤、寿命预测等研究有重大的意义。提出了基于光纤测温法测量瞬态热阻抗的方法,可实时获取器件的准确结温,计算得到的瞬态热阻抗曲线能反映器件的退化状态,更接近器件的实际热阻。分别对用光纤测量法和热敏参数法测得的瞬态热阻抗曲线进行比较,证明了光纤测量方法准确可行。
[Abstract]:The transient thermal impedance curves of the insulated gate bipolar transistor (IGBT) can characterize the degenerate state of the device, which is of great significance to the study of device damage and life prediction. A method of measuring transient thermal impedance based on optical fiber temperature measurement method is proposed. The accurate junction temperature of the device can be obtained in real time. The calculated transient thermal impedance curve can reflect the degenerate state of the device and is closer to the actual thermal resistance of the device. The transient thermal impedance curves measured by the optical fiber measurement method and the thermal sensitive parameter method are compared respectively. The results show that the optical fiber measurement method is accurate and feasible.
【作者单位】：河北工业大学电气工程学院;
【基金】：国家自然科学基金(51377044) 2012年度高校博士点专项科研基金(20121317110008)~~
【分类号】：TN322.8

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