一种EEPROM中高压产生电路的设计与实现
发布时间：2018-08-12 20:47
【摘要】：设计了一种应用于EEPROM的低电源电压的片内升压电路。基于电压倍乘电路,获得两倍于电源电压的驱动电压,用来驱动高压电荷泵电路得到EEPROM擦写用的15 V高压,实现EEPROM在1.3 V电压下稳定的工作。同时,基于负温度特性的电压分压电路实现电荷泵输出高压的负温度特性,提升了存储器在整个工作温度范围(-40℃~85℃)内的可靠性。设计的高压产生电路在0.13μm Embedded EEPROM CMOS工艺实现,工作电压为1.3 V~1.75 V,面积大小为600μm×80μm。
[Abstract]:An on-chip boost circuit with low power supply voltage applied to EEPROM is designed. Based on the voltage doubling circuit, the drive voltage is obtained, which is used to drive the high voltage charge pump circuit to get 15 V high voltage for EEPROM erasure, and to realize the stable operation of EEPROM at 1.3 V voltage. At the same time, the voltage divider circuit based on the negative temperature characteristic realizes the negative temperature characteristic of the charge pump output high voltage, and improves the reliability of the memory in the whole working temperature range (-40 鈩，
本文编号：2180321
[Abstract]:An on-chip boost circuit with low power supply voltage applied to EEPROM is designed. Based on the voltage doubling circuit, the drive voltage is obtained, which is used to drive the high voltage charge pump circuit to get 15 V high voltage for EEPROM erasure, and to realize the stable operation of EEPROM at 1.3 V voltage. At the same time, the voltage divider circuit based on the negative temperature characteristic realizes the negative temperature characteristic of the charge pump output high voltage, and improves the reliability of the memory in the whole working temperature range (-40 鈩，
本文编号：2180321
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