InGaN基LED中极化效应对发光特性的影响

发布时间：2018-08-14 17:31

【摘要】：主要利用电致发光的实验手段,研究了极化效应对InGaN基LED器件发光特性的影响。实验中发现,InGaN基LED器件的峰位随注入电流的增加产生了先蓝移后红移的现象,蓝光和绿光LED分别蓝移3 nm和8 nm;而AlGaInP基红光LED器件的峰位仅红移。进一步研究发现,InGaN基LED的外量子效率在注入电流为50 mA处开始剧烈下降,AlGaInP基LED的外量子效率在100 mA处才开始缓慢下降,并且两者呈现不同的下降规律。通过与模拟结果对比发现,InGaN基LED的效率在下降开始阶段与俄歇复合引起的效率下降规律类似。以上实验结果表明,InGaN基LED器件中存在极化电场,且该极化电场会对LED器件的效率衰减产生促进作用。
[Abstract]:The effect of polarization effect on the luminescence characteristics of InGaN based LED devices is studied by means of electroluminescence. It is found that the peak position of InGaN-based LED devices is blue shifted first and then redshift with the increase of injection current, blue and green LED shift 3 nm and 8 nm, respectively, while the peak position of AlGaInP based red light LED devices is only red-shifted. It is further found that the external quantum efficiency of InGaN-based LED begins to decrease sharply at the injection current of 50mA. The external quantum efficiency of AlGaInP-based LED decreases slowly at 100mA, and the two have different decreasing patterns. By comparing with the simulation results, it is found that the efficiency of InGaN-based LED is similar to that caused by Auger recombination at the beginning of the descent. The experimental results show that there is a polarization electric field in InGaN-based LED devices, and the polarization electric field can promote the efficiency attenuation of LED devices.
【作者单位】：南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室;南京大学扬州光电研究院;
【基金】：国家重点研发计划资助项目(2016YFB0400100,2016YFB0400602,2016YFB0400402) 国家高技术研究发展计划(863计划)资助项目(2014AA032605,2015AA033305) 国家自然科学基金资助项目(61274003,61422401,51461135002,61334009) 江苏省自然科学基金资助项目(BY2013077,BK20141320,BE2015111)
【分类号】：TN312.8

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