GaAs微波单片集成功率放大电路的研究设计
发布时间：2018-08-17 14:05
【摘要】：微波单片集成电路(MMIC)具有体积小、可靠性高、大量生产造价低等特点满足人们对当代通信系统的需求,无论在军用领域还是民用领域都具有很强的吸引力。微波功率放大器(PA)是构成相控阵雷达T/R组件的重要部分,而X波段的电磁波波长短,反射率强,应用在该波段的雷达在军事方面具有很大的实用价值。高功率微波放大器(HPA)一直是MMIC功率放大器研究的重点难点,HPA通常需要采用功率合成的方法实现,输出功率多为5W以上的水平。当前X波段功率放大器的缺点有单管的增益不足,输出功率小,效率低等,单管的性能制约着功率合成后HPA的性能。通过对场效应晶体管建模技术、微波PA相关理论的深入学习研究,结合文献资料,提出所要设计的微波单片集成功率放大电路的预期性能指标。设计研究了一款X波段单管单片驱动功率放大电路,可作为5W高功率微波放大器的驱动级使用。实现的目标是较高的功率输出、较好的效率、较小的体积,较高的可靠性。课题研究设计使用台湾WIN半导体公司0.25um GaAs PHEMT工艺模型,采用ADS仿真平台完成功率放大电路的设计、仿真、验证。涉及的关键技术有器件的选择、偏置电路、负载牵引技术、匹配网络等。所设计的功率放大电路工作在8-12GHz的频段内,增益超过10dB,带内波动2dB,1dB压缩点输出功率约29dBm,功率附加效率38%,输入输出电压驻波比2.5。当双音输出功率为25dBm时,三阶交调系数小于-30dBc。本次设计研究的功率放大电路各指标的实现符合预期要求,效率、线性度、增益均良好,单管匹配,减小了体积和功耗,降低了成本,提高了可靠性。29dBm的输出功率的实现为后续高功率放大器的研究设计打下了基础,研究成果具有一定的理论与实际应用价值。
[Abstract]:Microwave monolithic integrated circuit (MMIC) has the characteristics of small size, high reliability and low production cost to meet the needs of modern communication systems. Microwave power amplifier (PA) is an important part of the T / R module of phased array radar. The X-band electromagnetic wave has a short wavelength and strong reflectivity. The radar used in this band has great practical value in military field. High power microwave amplifier (HPA) is always the key and difficult point in the research of MMIC power amplifier. At present, the shortcomings of X-band power amplifier are lack of gain of single transistor, low output power, low efficiency and so on. The performance of single transistor restricts the performance of HPA after power synthesis. Based on the modeling technology of field-effect transistor and the study of microwave PA theory, the expected performance index of microwave monolithic integrated power amplifier circuit is proposed. An X band monolithic drive power amplifier is designed and studied, which can be used as the driving stage of 5 W high power microwave amplifier. The goal is higher power output, better efficiency, smaller volume and higher reliability. The 0.25um GaAs PHEMT process model of Taiwan WIN Semiconductor Company and the ADS simulation platform are used to design, simulate and verify the power amplifier circuit. The key technologies involved are device selection, bias circuit, load traction technology, matching network and so on. The designed power amplifier circuit operates in the frequency band of 8-12GHz. The gain is more than 10 dB, the in-band fluctuation is 2 dB / 1 dB, the output power is about 29dBm, the additional power efficiency is 38 and the VSWR of input and output voltage is 2.5. When the dual tone output power is 25dBm, the third order intermodulation coefficient is less than -30 dBc. The realization of the power amplifier circuit in this design meets the expected requirements. The efficiency, linearity and gain are all good. The single transistor matching reduces the volume and power consumption, and reduces the cost. The realization of output power with improved reliability of .29dBm lays a foundation for the subsequent research and design of high power amplifier. The research results have certain theoretical and practical application value.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
本文编号：2187870
[Abstract]:Microwave monolithic integrated circuit (MMIC) has the characteristics of small size, high reliability and low production cost to meet the needs of modern communication systems. Microwave power amplifier (PA) is an important part of the T / R module of phased array radar. The X-band electromagnetic wave has a short wavelength and strong reflectivity. The radar used in this band has great practical value in military field. High power microwave amplifier (HPA) is always the key and difficult point in the research of MMIC power amplifier. At present, the shortcomings of X-band power amplifier are lack of gain of single transistor, low output power, low efficiency and so on. The performance of single transistor restricts the performance of HPA after power synthesis. Based on the modeling technology of field-effect transistor and the study of microwave PA theory, the expected performance index of microwave monolithic integrated power amplifier circuit is proposed. An X band monolithic drive power amplifier is designed and studied, which can be used as the driving stage of 5 W high power microwave amplifier. The goal is higher power output, better efficiency, smaller volume and higher reliability. The 0.25um GaAs PHEMT process model of Taiwan WIN Semiconductor Company and the ADS simulation platform are used to design, simulate and verify the power amplifier circuit. The key technologies involved are device selection, bias circuit, load traction technology, matching network and so on. The designed power amplifier circuit operates in the frequency band of 8-12GHz. The gain is more than 10 dB, the in-band fluctuation is 2 dB / 1 dB, the output power is about 29dBm, the additional power efficiency is 38 and the VSWR of input and output voltage is 2.5. When the dual tone output power is 25dBm, the third order intermodulation coefficient is less than -30 dBc. The realization of the power amplifier circuit in this design meets the expected requirements. The efficiency, linearity and gain are all good. The single transistor matching reduces the volume and power consumption, and reduces the cost. The realization of output power with improved reliability of .29dBm lays a foundation for the subsequent research and design of high power amplifier. The research results have certain theoretical and practical application value.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
【参考文献】
相关硕士学位论文 前1条
1 陈俊;Ka频段2W固态功率放大器设计[D];南京理工大学;2004年
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