集成式等效低压二极管
发布时间：2018-08-18 07:59
【摘要】：采用集成器件结构和先进工艺研制了一款等效低压二极管。该等效低压二极管的等效电路实质是一个普通npn三极管和一个普通二极管并联。这种结构的器件的正向特性是普通二极管的正向压降;反向特性是普通npn三极管的发射极E和集电极C之间的特性。选择特有的版图设计和工艺流程,可以将普通npn三极管的发射极E和集电极C之间的电压VECO(实际也是等效低压二极管的反向击穿电压)调整到5.1 V以下,该等效低压二极管的反向漏电可达到纳安级,反向动态电阻可达到10Ω以内。利用此特性,该等效低压二极管适合于高频千兆网口接口的保护,可以避免传输信号丢失。
[Abstract]:An equivalent low voltage diode is developed by using integrated device structure and advanced technology. The equivalent circuit of the equivalent low voltage diode is a common npn transistor and a common diode in parallel. The forward characteristic of the device with this structure is the forward voltage drop of the ordinary diode and the reverse characteristic is the characteristic between the emitter E and the collector C of the ordinary npn transistor. The voltage VECO (reverse breakdown voltage of equivalent low voltage diode) between emitter E and collector C of the common npn transistor can be adjusted to less than 5.1V by selecting the unique layout design and process flow. The reverse leakage of the equivalent low voltage diode can reach the nano level and the reverse dynamic resistance can reach less than 10 惟. Using this characteristic, the equivalent low voltage diode is suitable for the protection of high frequency gigabit interface and can avoid the loss of transmission signal.
【作者单位】： 杭州士兰集成电路有限公司;
【分类号】：TN31
，
本文编号：2188846
[Abstract]:An equivalent low voltage diode is developed by using integrated device structure and advanced technology. The equivalent circuit of the equivalent low voltage diode is a common npn transistor and a common diode in parallel. The forward characteristic of the device with this structure is the forward voltage drop of the ordinary diode and the reverse characteristic is the characteristic between the emitter E and the collector C of the ordinary npn transistor. The voltage VECO (reverse breakdown voltage of equivalent low voltage diode) between emitter E and collector C of the common npn transistor can be adjusted to less than 5.1V by selecting the unique layout design and process flow. The reverse leakage of the equivalent low voltage diode can reach the nano level and the reverse dynamic resistance can reach less than 10 惟. Using this characteristic, the equivalent low voltage diode is suitable for the protection of high frequency gigabit interface and can avoid the loss of transmission signal.
【作者单位】： 杭州士兰集成电路有限公司;
【分类号】：TN31
，
本文编号：2188846
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