新型碳基场效应管在逻辑电路中的应用研究
发布时间：2018-08-18 17:12
【摘要】：本文主要进行基于沟道工程技术和栅工程技术碳基场效应管器件以及由此构成逻辑电路的分析和研究。在器件层次,利用非平衡格林函数(NEGF)和泊松方程(Poisson)自洽求解的量子力学模型,探讨了沟道工程技术和栅工程技术对新型碳基场效应管的输运特性的影响。在电路层次,基于查找表模型,利用SPICE仿真对新型碳基器件所构建逻辑电路进行性能分析和研究。通过本课题的研究,能够为将来碳基器件和电路设计提供理论依据。本文的主要内容有:首先,研究了基于石墨烯纳米条带材料的异质栅氧化层结构隧穿型场效应管(GNR HTFET)并与其他相关结构进行比较分析。研究结果表明:这种新型结构能够降低关态电流,从而提高了开关电流比,并且亚阈值摆幅也有所减小。HTFET相对于普通结构器件迟滞时间减小,电压增益增大。其次,研究了基于碳纳米管材料的源漏轻掺杂结构隧穿型场效应管(CNT LDDS-HTFET)的电学特性,并与其他相关结构进行比较分析。研究结果表明:这种新型结构也能够降低关态电流,从而提高了开关电流比。LDDS-HTFET相对于其他结构器件截止频率变大、栅电容减小,从而抑制了短沟道效应,使得LDDS-HTFET具有较好的高频特性。最后,本文利用Verilog-A在所研究器件的转移特性的基础上建立查找表(LUT)模型,并在SPICE中构建相应的电路,分析其数字特性并与其他器件构建的电路进行比较。对于GNR HTFET所构建的反相器,分析了其瞬态特性,并且与高K隧穿型场效应管进行了比较。研究结果表明:由GNR HTFET所构建的反向器具有更小的功耗延迟积(PDP),且其PDP随着栅长和供电电压的变化率相对较小,也就是说GNR HTFET构建的电路具有更好的稳定性。然后,用LDDS-HTFET构建了多种逻辑电路,验证了这些逻辑电路的逻辑功能的正确性,并将其电路性能与普通结构进行比较分析,研究结果表明:该新型结构所构建的逻辑电路具有更低的延迟、功耗和PDP,并且所构建的存储器拥有相对较高的噪声容限。
[Abstract]:In this paper, based on channel engineering technology and gate engineering technology, the analysis and research of carbon based FET devices and their logic circuits are carried out. At the device level, the influence of channel engineering technology and gate engineering technology on the transport characteristics of new carbon-based FET is discussed by using the quantum mechanical model of nonequilibrium Green function (NEGF) and Poisson equation (Poisson) self-consistent solution. At the circuit level, based on the lookup table model, the performance of the logic circuit constructed by the new carbon-based device is analyzed and studied by SPICE simulation. The research can provide theoretical basis for the design of carbon-based devices and circuits in the future. The main contents of this paper are as follows: firstly, the tunneling FET (GNR HTFET) based on graphene nanostrip is studied and compared with other related structures. The results show that the new structure can reduce the on-off current and increase the switching current ratio, and the sub-threshold swing is also reduced. The hysteresis time of the HTFET is reduced compared with that of the common structure device, and the voltage gain is increased. Secondly, the electrical properties of tunneling field effect transistor (CNT LDDS-HTFET) with light-doped source and drain structure based on carbon nanotube materials are studied and compared with other related structures. The results show that the new structure can also reduce the on-off current, thus increasing the switching current ratio. LDDS-HTFET increases the cutoff frequency compared with other devices, and the gate capacitance decreases, thus the short channel effect is restrained. The LDDS-HTFET has better high frequency characteristic. Finally, Verilog-A is used to build the lookup table (LUT) model on the basis of the transfer characteristics of the devices studied. The corresponding circuits are constructed in SPICE, and the digital characteristics are analyzed and compared with the circuits constructed by other devices. The transient characteristics of the inverter constructed by GNR HTFET are analyzed and compared with the high K tunneling FET. The results show that the inverter constructed by GNR HTFET has smaller power delay product (PDP),) and its PDP change rate with gate length and supply voltage is relatively small, which means that the circuit constructed by GNR HTFET has better stability. Then, a variety of logic circuits are constructed with LDDS-HTFET to verify the correctness of the logic functions of these logic circuits, and the performance of the circuits is compared with the common structure. The results show that the new structure has lower delay, lower power consumption and PDP, and the memory has a relatively high noise tolerance.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
本文编号：2190135
[Abstract]:In this paper, based on channel engineering technology and gate engineering technology, the analysis and research of carbon based FET devices and their logic circuits are carried out. At the device level, the influence of channel engineering technology and gate engineering technology on the transport characteristics of new carbon-based FET is discussed by using the quantum mechanical model of nonequilibrium Green function (NEGF) and Poisson equation (Poisson) self-consistent solution. At the circuit level, based on the lookup table model, the performance of the logic circuit constructed by the new carbon-based device is analyzed and studied by SPICE simulation. The research can provide theoretical basis for the design of carbon-based devices and circuits in the future. The main contents of this paper are as follows: firstly, the tunneling FET (GNR HTFET) based on graphene nanostrip is studied and compared with other related structures. The results show that the new structure can reduce the on-off current and increase the switching current ratio, and the sub-threshold swing is also reduced. The hysteresis time of the HTFET is reduced compared with that of the common structure device, and the voltage gain is increased. Secondly, the electrical properties of tunneling field effect transistor (CNT LDDS-HTFET) with light-doped source and drain structure based on carbon nanotube materials are studied and compared with other related structures. The results show that the new structure can also reduce the on-off current, thus increasing the switching current ratio. LDDS-HTFET increases the cutoff frequency compared with other devices, and the gate capacitance decreases, thus the short channel effect is restrained. The LDDS-HTFET has better high frequency characteristic. Finally, Verilog-A is used to build the lookup table (LUT) model on the basis of the transfer characteristics of the devices studied. The corresponding circuits are constructed in SPICE, and the digital characteristics are analyzed and compared with the circuits constructed by other devices. The transient characteristics of the inverter constructed by GNR HTFET are analyzed and compared with the high K tunneling FET. The results show that the inverter constructed by GNR HTFET has smaller power delay product (PDP),) and its PDP change rate with gate length and supply voltage is relatively small, which means that the circuit constructed by GNR HTFET has better stability. Then, a variety of logic circuits are constructed with LDDS-HTFET to verify the correctness of the logic functions of these logic circuits, and the performance of the circuits is compared with the common structure. The results show that the new structure has lower delay, lower power consumption and PDP, and the memory has a relatively high noise tolerance.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
【参考文献】
相关期刊论文 前2条
1 刘兴辉;赵宏亮;李天宇;张仁;李松杰;葛春华;;基于异质双栅电极结构提高碳纳米管场效应晶体管电子输运效率[J];物理学报;2013年14期
2 李斌;李永常;;石墨、金刚石家族新成员——碳纳米管[J];化学教育;2006年11期
相关硕士学位论文 前1条
1 蒋嗣韬;基于Graphene条带的纳米结构电学传输性质研究[D];南京邮电大学;2013年
，本文编号：2190135
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2190135.html
