高速SiC MOSFET开关特性的测试方法

发布时间：2018-08-18 17:17

【摘要】：为正确地评估高速SiC MOSFET的开关特性,基于双脉冲测试平台对精准的测试方法进行研究。首先,仿真证明电路中寄生电感对SiC MOSFET开关特性的影响,优化设计PCB布局以减小寄生电感,对比PCB布局优化前后的测试结果。其次,对比分析续流二极管的结电容以及负载电感的寄生电容对SiC MOSFET开通特性的影响。然后,对比分析使用不同带宽的非隔离电压探头、不同电压探头地线连接方式、不同电流测试设备对测试结果的影响,并说明电压与电流波形之间相位延迟对开关能量损耗的影响。最后,对比分析不同测试点对测试结果的影响。
[Abstract]:In order to correctly evaluate the switching characteristics of high speed SiC MOSFET, the accurate test method based on dual pulse test platform was studied. First, the effect of parasitic inductance on the switching characteristics of SiC MOSFET is proved by simulation. The PCB layout is optimized to reduce the parasitic inductance, and the test results before and after the optimization of PCB layout are compared. Secondly, the effects of junction capacitance of recurrent diode and parasitic capacitance of load inductor on the switching characteristics of SiC MOSFET are compared and analyzed. Then, the influence of different voltage probe with different bandwidth, different voltage probe ground connection mode, different current testing equipment on the test results is compared and analyzed. The effect of phase delay between voltage and current waveform on switching energy loss is also explained. Finally, the effects of different test points on the test results are compared and analyzed.
【作者单位】：北京交通大学电气工程学院;
【分类号】：TN386

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