WLAN高增益可调中继放大器的设计
发布时间：2018-08-18 18:04
【摘要】：随着无线通信技术的迅猛发展,无线局域网(WLAN,Wireless Local Area Networks)的应用也愈加广泛。在无线局域网中,低噪声放大器(LNA)和功率放大器(PA)作为射频前端的关键模块,对整个无线通信系统性能的好坏起着决定性的作用。由低噪放与功放组成的中继放大器,可以在隧道、矿井等场合进行信号的中继放大,使信号覆盖范围更广、传播距离更远。基于无线局域网设计了一款高增益可调的中继放大器,该放大器模块包括两级低噪声放大器、功率放大器和数控衰减器。低噪声放大器和功率放大器的设计分别采用了晶体管和芯片两种方式。低噪声放大器模块晶体管方式采用噪声系数比较低的ATF55143和ATF54143两级设计;芯片方式采用HITTITE的HMC286E两级设计。功率放大器模块晶体管方式采用ATF50189单级设计;芯片方式采用RFMD的RFPA5201E单级设计。数控衰减器模块采用芯片HMC273设计。在电路设计过程中,使用电磁仿真软件ADS2011对低噪放和功放进行原理图以及版图的联合仿真设计,并在后期使用PCB设计软件Altium Designer进行最终的布局布线。经过实际的加工测试,两种实现方式的低噪放均能实现至少26dB的增益,噪声系数均小于2dB;两种方式的功放输出功率均能到达29dBm,晶体管方式能够实现10dB的增益,芯片方式能够实现30dB的增益;数控衰减器实现了 1到31dB的衰减控制。可以看出,测试结果与仿真结果有较好的一致性。设计实现了低噪声、高增益及较大输出功率的指标,达到了高增益可调中继放大的目的。
[Abstract]:With the rapid development of wireless communication technology, WLAN (Wireless LAN) is widely used. Low noise amplifier (LNA) and power amplifier (PA) are the key modules of RF front-end in WLAN, which plays a decisive role in the performance of the whole wireless communication system. The relay amplifier composed of low noise amplifier and power amplifier can relay and amplify the signal in tunnels and mines, which makes the signal cover a wider range and spread farther. A high gain adjustable relay amplifier is designed based on WLAN. The amplifier module consists of a two-stage low-noise amplifier, a power amplifier and a numerical control attenuator. Low noise amplifier and power amplifier are designed by transistor and chip respectively. The low noise amplifier module transistor is designed by ATF55143 and ATF54143 with low noise coefficient, and the chip is designed by HMC286E with HITTITE. The transistor mode of power amplifier adopts ATF50189 single stage design, and the chip mode adopts RFPA5201E single stage design of RFMD. The module of numerical control attenuator is designed by chip HMC273. In the process of circuit design, the principle diagram and layout of low noise amplifier and power amplifier are designed by electromagnetic simulation software ADS2011, and the final layout and routing are carried out by PCB design software Altium Designer in the later stage. Through the actual processing test, the low noise amplifier of two kinds of realization can realize at least the gain of 26dB, the noise coefficient is less than 2 dB, the output power of both kinds of power amplifier can reach 29dBm. the gain of 10dB can be realized by transistor mode. The gain of 30dB can be realized by chip mode, and the attenuation control from 1 to 31dB is realized by numerical control attenuator. It can be seen that the test results are in good agreement with the simulation results. The targets of low noise, high gain and large output power are designed and realized, and the purpose of high gain adjustable relay amplification is achieved.
【学位授予单位】：大连海事大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722;TN925.93
本文编号：2190259
[Abstract]:With the rapid development of wireless communication technology, WLAN (Wireless LAN) is widely used. Low noise amplifier (LNA) and power amplifier (PA) are the key modules of RF front-end in WLAN, which plays a decisive role in the performance of the whole wireless communication system. The relay amplifier composed of low noise amplifier and power amplifier can relay and amplify the signal in tunnels and mines, which makes the signal cover a wider range and spread farther. A high gain adjustable relay amplifier is designed based on WLAN. The amplifier module consists of a two-stage low-noise amplifier, a power amplifier and a numerical control attenuator. Low noise amplifier and power amplifier are designed by transistor and chip respectively. The low noise amplifier module transistor is designed by ATF55143 and ATF54143 with low noise coefficient, and the chip is designed by HMC286E with HITTITE. The transistor mode of power amplifier adopts ATF50189 single stage design, and the chip mode adopts RFPA5201E single stage design of RFMD. The module of numerical control attenuator is designed by chip HMC273. In the process of circuit design, the principle diagram and layout of low noise amplifier and power amplifier are designed by electromagnetic simulation software ADS2011, and the final layout and routing are carried out by PCB design software Altium Designer in the later stage. Through the actual processing test, the low noise amplifier of two kinds of realization can realize at least the gain of 26dB, the noise coefficient is less than 2 dB, the output power of both kinds of power amplifier can reach 29dBm. the gain of 10dB can be realized by transistor mode. The gain of 30dB can be realized by chip mode, and the attenuation control from 1 to 31dB is realized by numerical control attenuator. It can be seen that the test results are in good agreement with the simulation results. The targets of low noise, high gain and large output power are designed and realized, and the purpose of high gain adjustable relay amplification is achieved.
【学位授予单位】：大连海事大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722;TN925.93
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