高压FSRD少子寿命控制方法的研究

发布时间：2018-08-25 14:00

【摘要】：高频电力电子技术的快速发展对电路中常用主开关器件(如IGBT、GTO及IGCT等)的性能要求不断提升,同时要求与之配套使用的续流二极管具有优良的电学性能和较高的可靠性。目前,高压快速软恢复二极管(FSRD)性能的改善主要是通过结构优化和载流子寿命控制来实现,其中寿命控制技术对其特性和可靠性有重要的影响。本文首先重点分析了高、低能电子辐照引入的复合中心种类及少数载流子寿命对器件特性的影响。其次利用CASINO和SRIM程序分析了高、低能电子辐照及H+辐照在硅中所形成的缺陷分布,最后利用ISE仿真软件分析了不同辐照方法对高压快速软恢复二极管特性和抗动态雪崩、抗浪涌电流特性的影响,主要研究内容如下:第一,简述了高压FSRD的特性对少数载流子寿命的要求,分析了不同辐照方法所产生的缺陷能级参数,分析了辐照在硅中产生缺陷能级的最佳位置和少数载流子寿命对器件特性的影响。第二,采用CASINO软件分析了高、低能电子辐照在硅中形成的缺陷分布,确定了仿真所用的器件结构和物理模型参数,然后基于ISE-TCAD软件平台,建立了高压FSRD的辐照模型,研究了高、低能电子辐照产生的缺陷分布对高压FSRD各项特性的影响。第三,利用SRIM程序分析了 H+辐照在硅中形成的缺陷分布,然后通过ISE-TCAD软件中的辐照模型,将电子辐照与H+辐照结合后形成的缺陷分布引入高压二极管中,研究了不同的缺陷分布对高压二极管各项特性的影响。第四,对比了不同辐照条件下FSRD的特性,分析了不同方法辐照对器件抗动态雪崩和抗浪涌电流特性的影响。本文的研究成果可以为高压FSRD的设计与研发提供一定的参考。
[Abstract]:With the rapid development of high-frequency power electronics technology, the performance of the main switch devices (such as IGBT,GTO and IGCT) is constantly improved, and the recurrent diodes used with them are required to have excellent electrical performance and high reliability. At present, the performance improvement of high voltage fast soft recovery diode (FSRD) is mainly realized by structure optimization and carrier life control, in which life control technology has an important impact on its characteristics and reliability. In this paper, the influence of the type of recombination centers and the lifetime of minority carriers on the characteristics of the devices induced by high and low energy electron irradiation is analyzed. Secondly, the defect distribution caused by high and low energy electron irradiation and H irradiation in silicon was analyzed by CASINO and SRIM program. Finally, the characteristics of high voltage fast soft recovery diode and the resistance to dynamic avalanche were analyzed by ISE simulation software. The main contents of this paper are as follows: first, the requirements of the characteristics of high voltage FSRD on the lifetime of minority carriers are briefly described, and the defect energy level parameters produced by different irradiation methods are analyzed. The effects of the optimum position of the defect level and the minority carrier lifetime on the characteristics of the device are analyzed. Secondly, the defect distribution of high and low energy electron irradiation in silicon is analyzed by using CASINO software, and the device structure and physical model parameters used in simulation are determined. Then, based on the ISE-TCAD software platform, the irradiation model of high voltage FSRD is established, and the high voltage FSRD radiation model is studied. The effect of defect distribution induced by low energy electron irradiation on the characteristics of high pressure FSRD. Thirdly, the defect distribution formed by H irradiation in silicon is analyzed by SRIM program, and then the defect distribution formed by electron irradiation combined with H irradiation is introduced into high voltage diodes through the irradiation model in ISE-TCAD software. The effects of different defect distributions on the characteristics of high voltage diodes are studied. Fourthly, the characteristics of FSRD under different irradiation conditions are compared, and the effects of different irradiation methods on the anti-dynamic avalanche and anti-surge current characteristics of the devices are analyzed. The research results in this paper can provide some reference for the design and development of high-voltage FSRD.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN31

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