光源掩模协同优化的原理与应用
发布时间：2018-08-26 14:34
【摘要】：当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限。光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期。综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术。
[Abstract]:Light source mask co-optimization (SMO), as a new kind of resolution enhancement technology, can significantly improve the overlapping process window of semiconductor lithography under the limit size and effectively extend the life cycle of conventional lithography technology. The principle of SMO is analyzed. The development of SMO and its application in semiconductor manufacturing process are introduced. The application of SMO in the development of advanced lithographic nodes is mainly discussed. The challenges and development trend of SMO are prospected. It is considered that SMO is not only an important part of 193 nm infiltration lithography, but also an important part of EUV lithography. A necessary technology.
【作者单位】： 中国科学院微电子研究所微电子器件与集成技术重点实验室;
【基金】：国家科技重大专项资助项目(2016ZX02301001) 国家自然科学基金资助项目(61604172)
【分类号】：TN305.7
本文编号：2205170
[Abstract]:Light source mask co-optimization (SMO), as a new kind of resolution enhancement technology, can significantly improve the overlapping process window of semiconductor lithography under the limit size and effectively extend the life cycle of conventional lithography technology. The principle of SMO is analyzed. The development of SMO and its application in semiconductor manufacturing process are introduced. The application of SMO in the development of advanced lithographic nodes is mainly discussed. The challenges and development trend of SMO are prospected. It is considered that SMO is not only an important part of 193 nm infiltration lithography, but also an important part of EUV lithography. A necessary technology.
【作者单位】： 中国科学院微电子研究所微电子器件与集成技术重点实验室;
【基金】：国家科技重大专项资助项目(2016ZX02301001) 国家自然科学基金资助项目(61604172)
【分类号】：TN305.7
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