基于栅极电感反馈的CMOS差分Vacker VCO设计
发布时间：2018-08-29 17:14
【摘要】：提出了一种基于栅极电感反馈的Vacker压控振荡器(VCO),该结构能够改善电路的负阻抗,进而使得电路易于起振。对晶体管的负载效应和振幅稳定性的分析表明,该Vacker VCO相比较于Colpitts VCO,具有更好的振幅稳定性,进而改善了VCO的相位噪声。基于0.13μm RF CMOS工艺,对该Vacker VCO进行了设计与芯片实现,测试结果表明:在消耗4.2 mW功耗的前提下,该VCO振荡频率为11 GHz～12.6 GHz,在11.8 GHz振荡频率处,相位噪声为-115.1 dBc/Hz@1 MHz,品质因数FOM指标达到-190.3 dBc/Hz。
[Abstract]:A novel VCO based on gate inductance feedback is proposed, which can improve the negative impedance of the VCO and make the VCO oscillate easily. The analysis of the load effect and amplitude stability of the VCO shows that the VCO has better amplitude stability than the Colpitts VCO, and thus improves the phase of the VCO. Noise. Based on the 0.13 micron RF CMOS process, the Vacker VCO is designed and implemented on the chip. The test results show that the oscillation frequency of the VCO is 11 GHz to 12.6 GHz, the phase noise is -115.1 dBc/Hz@1 MHz at 11.8 GHz oscillation frequency, and the quality factor FOM index reaches - 190.3 dBc/Hz.
【作者单位】： 山东理工大学电气与电子工程学院;
【基金】：2013年山东省淄博市科学技术发展计划项目(2013GG02104)
【分类号】：TN752
，
本文编号：2211876
[Abstract]:A novel VCO based on gate inductance feedback is proposed, which can improve the negative impedance of the VCO and make the VCO oscillate easily. The analysis of the load effect and amplitude stability of the VCO shows that the VCO has better amplitude stability than the Colpitts VCO, and thus improves the phase of the VCO. Noise. Based on the 0.13 micron RF CMOS process, the Vacker VCO is designed and implemented on the chip. The test results show that the oscillation frequency of the VCO is 11 GHz to 12.6 GHz, the phase noise is -115.1 dBc/Hz@1 MHz at 11.8 GHz oscillation frequency, and the quality factor FOM index reaches - 190.3 dBc/Hz.
【作者单位】： 山东理工大学电气与电子工程学院;
【基金】：2013年山东省淄博市科学技术发展计划项目(2013GG02104)
【分类号】：TN752
，
本文编号：2211876
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