低功耗CMOS带隙基准电压源设计
发布时间：2018-09-11 09:05
【摘要】：从带隙基准原理出发,通过对传统的带隙基准电路中的反馈环路进行了改进,设计了一种带启动电路的带隙基准电压源。带隙基准电压源电路具有结构简单、功耗低、电压抑制比高以及温度系数低等特点。采用TSMC 0.13μm工艺对电路进行流片,管芯面积为100μm×94μm。测试结果显示,电源电压1V时,在-30~120℃范围内温度系数为6.6×10-6/℃,功耗仅1.8μW;电源电压从0.76V变化到2V,输出电压偏差仅1.52mV,电源抑制比达58dB。
[Abstract]:Based on the principle of bandgap reference, the feedback loop in the traditional bandgap reference circuit is improved, and a bandgap voltage reference source with starting circuit is designed. Bandgap voltage reference circuit has the advantages of simple structure, low power consumption, high voltage rejection ratio and low temperature coefficient. The TSMC 0.13 渭 m process is used for the flow sheet of the circuit. The core area is 100 渭 m 脳 94 渭 m. The test results show that the temperature coefficient is 6.6 脳 10 ~ (-6) / 鈩，
本文编号：2236245
[Abstract]:Based on the principle of bandgap reference, the feedback loop in the traditional bandgap reference circuit is improved, and a bandgap voltage reference source with starting circuit is designed. Bandgap voltage reference circuit has the advantages of simple structure, low power consumption, high voltage rejection ratio and low temperature coefficient. The TSMC 0.13 渭 m process is used for the flow sheet of the circuit. The core area is 100 渭 m 脳 94 渭 m. The test results show that the temperature coefficient is 6.6 脳 10 ~ (-6) / 鈩，
本文编号：2236245
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